1) Zr-based inorganic-organic hybrid material
掺锆有机无机杂化材料
1.
Researches on the two-photon photopolymerization technology of a Zr-based inorganic-organic hybrid material have been processed.
飞秒激光掺锆有机无机杂化材料双光子聚合工艺研究。
2) Sb_2S_3 doped PMMA/SiO_2 glasses
Sb_2S_3掺杂PMMA/SiO_2有机-无机杂化材料
3) organic-inorganic hybrid material
有机-无机杂化材料
1.
A new type of sol-gel organic-inorganic hybrid material was developed and used for the production of biosensors.
制备了一种应用于生物传感器的新型有机-无机杂化材料,这种杂化材料由二氧化硅溶胶和聚乙烯醇接枝巯基乙酸组成。
2.
A novel polyoxometalates [Bu4N][Ni(pph3)2]PW11O39 was prepared as organic-inorganic hybrid material for modified electrode by the sol-gel technique.
采用溶胶-凝胶技术制备了新多金属氧酸盐[Bu4N][Ni(pph3)2]PW11O39(Bu为四丁基,pph为苯基磷)有机-无机杂化材料修饰电极,该修饰电极不仅保持了本体溶液的电化学和电催化性质,而且还具有很好的稳定性与灵敏度。
3.
A new organic-inorganic hybrid material-palladacycle/SiO_2 has been prepared from γ-aminopropyltrimethoxysilane via grafting on silica,followed by reacting with vanillic aldehyde and then with Li_2PdCl_4.
首先用γ-氨丙基三甲氧基硅烷对SiO2进行接枝改性,再依次与香草醛、Li2PdCl4反应,合成了环钯/SiO2有机-无机杂化材料。
4) organic/inorganic hybrid material
有机-无机杂化材料
1.
A preparation method of glucose oxidase electrode based on an organic/inorganic hybrid material and car-bon nanotubes was investigated.
介绍了一种基于有机-无机杂化材料和碳纳米管的葡萄糖氧化酶电极的制备方法。
5) organic-inorganic hybrid materials
有机-无机杂化材料
1.
Preparation technology and applications on organic-inorganic hybrid materials;
有机-无机杂化材料的制备技术和应用前景
2.
Over the past decades,the preparation of inorganic and organic-inorganic hybrid materials by the sol-gel process of alkoxysilanes has continued to be an active research area.
利用烷氧基硅烷作为前驱体之一,进行溶胶-凝胶(sol-gel)反应制备无机氧化物和有机-无机杂化材料,近几十年来一直是一个研究热点。
3.
As a newborn intersectional subject in material science, polymeric organic-inorganic hybrid materials will play an important role in the field of material science with their unique structure and excellent properties.
介绍制备聚合物基有机-无机杂化材料的成键方式及制备的主要方法、原理及其特点,包括溶胶-凝胶法、插层复合法、共混法、原位聚合法、纳米微粒原位生成法和微乳液法等,并对有机-无机杂化材料今后的发展作了展望。
6) organic-inorganic hybrid
有机-无机杂化材料
1.
Preparation and microstructure of hydroxyl-terminated polydimethylsiloxane-modified CaO-SiO_2-TiO_2 organic-inorganic hybrids;
羟基硅油改性CaO-SiO_2-TiO_2有机-无机杂化材料的制备与显微结构
2.
Development of bioactive organic-inorganic hybrids prepared through sol-gel method;
有机-无机杂化材料在骨修复中的应用
3.
Synthesis and Characterization of Organic-inorganic Hybrid:NaLn[Mo_8O_(26)(NH_2CH_2COOH)]·nH2_O;
有机-无机杂化材料NaLn[Mo_8O_(26)(NH_2CH_2COOH)]·nH2_O的合成与表征
补充资料:半导体材料掺杂
半导体材料掺杂
doping for semiconductor material
bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法,在大多数情况下,是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型,如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理),如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理),如锗中掺金;(4)获得晶体的良好力学性能,如硅中掺氮;(5)提高发光效率,改变发光波长,如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配,如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行,大多数是在单晶拉制过程中进行掺杂,薄膜材料则在薄膜制备过程中进行掺杂,而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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