1) divisorless ideal
无因子的理想
2) Ideality factor
理想因子
1.
Research on the ideality factor of GaN light-emitting diodes on Si substrate;
Si衬底GaN基LED理想因子的研究
2.
The ideality factor and the barrier height of Schottky contact on AlGaN/GaN heterostructure are calculated by I-V measurement in a wide temperature range.
通过对AlGaN/GaN HEMT器件肖特基栅电流输运机理的研究,在变温下采用I-V法对AlGaN/GaN上的Ni/Au肖特基势垒高度和理想因子进行了计算。
3.
An ideality factor of n=3 and a series resistance of RS=93Ω are obtained from the forward current-voltage curve of the device.
从器件的正向I-V特性曲线计算了理想因子n与串联电阻RS分别为3和93Ω。
3) ideal factor
理想因子
1.
Before gate metallization,experiment were made through different surface treatment methods and results show that the Schottky characteristics can be improved,but reverse leakage current and ideal factor can not be obtained fundamentally.
在栅金属化前,采用不同的表面处理方法进行实验,发现通过表面处理,栅肖特基特性得到一定的改善,但还不能从根本上解决漏电大、理想因子偏高的问题。
2.
It is found that in the backward voltage segment of the I-V curve the leakage current is larger because of deep-level-assistant tunneling;under little forward voltage metal gathers along with the dislocations thus leads to leakage current;in the generation-recombination and diffusion current segments the restriction from MQWs leads to larger ideal factor;low imp.
结果表明,相对理想情形,特性曲线的反向偏压区漏电因深能级隧穿偏大;正向小偏压下因沿着位错汇聚金属产生漏电流;产生-复合电流区和扩散电流区因多量子阱限制而理想因子偏大;由于有源区低掺杂,在10 A/cm2就开始形成大注入区;在大电流下也因为串联电阻分压而形成串联电阻区。
3.
After annealing the barrier height and the ideal factor of the diode increased from 0.
计算了退火前后该器件的理想因子、势垒高度。
4) ideality factor m
理想因子m
5) Diode Ideality Factor
二极管理想因子
6) zero divisors and ideals
零因子和理想
1.
At first,we discuss the Structure of the ring Z/(pm ),namely,the structure and amount of nilpotent elements idempotent elements, invertible elements, zero divisors and ideals in Z/ (pm).
本文先讨论了Ｚ／（ｐｍ）环的结构，如其幂零元、幂等元、可逆元、零因子和理想的结构和数量。
补充资料：无因
1.无所凭借;没有机缘。 2.无故，无端。 3.犹无须。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条