1) electric field emission
电场发射
2) electron field emission
场电子发射
1.
The influence of thermal annealing on the electron field emission characteristics of the AIN coating on Si substrate was investigated.
以氮气为反应气体；用射频反应溅射方法制备了ＡＩＮ薄膜，结合ＸＰＳ和ＸＲＤ表征考察了热退火后处理对样品场电子发射性能的影响。
2.
Current research on electron field emission from wide band-gap materials, such as diamond, diamond-like carbon, cubic boron nitride, aluminum nitride and silicon carbide films is reviewed.
介绍了以金刚石为代表的宽带隙薄膜材料场电子发射研究背景和现状 ,对金刚石、类金刚石 (DLC)、立方氮化硼 (c-BN)、氮化铝 (AlN)和碳化硅 (SiC)薄膜场电子发射研究的进展进行了评述 ,着重介绍了发射性能与薄膜的结构特征、杂质含量和处理方法间的关系 ,并讨论了研究中存在的问题 。
3.
The behavior of electron field emission from CVD d iamond films implant ed by nitrogen iron has been studied.
研究了氮离子注入CVD金刚石薄膜的场电子发射行为 。
3) electron field emission
电子场发射
1.
First-principles study of electron field emission from the carbon nanotube with B doping and H_2O adsorption;
掺硼水吸附碳纳米管电子场发射性能的第一性原理研究
2.
First-principles study of electron field emission from the carbon nanotube with nitrogen doping and H_2O adsorption
氮掺杂及水分子吸附碳纳米管电子场发射第一性原理研究
3.
The effects of the thermal annealing on the bonding structure and the electron field emission characteristics of CN_x films were investigated.
结果发现,沉积的CNx膜中氮原子与sp,sp2,sp3杂化碳原子相键合,并对经过退火的CNx膜的键合结构和电子场发射特性的影响进行了研究。
4) field electron emission
场电子发射
1.
Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied.
研究了多孔硅衬底微波 CVD金刚石薄膜的制备工艺及其场电子发射特性 。
2.
Field electron emission measurements of nano-carbon films were also carried out showing the ture on field as low as 1.
进一步的场致发射测试结果显示:此种类毛虫形状纳米级碳薄膜具有场发射大面积大(>4cm~2)、发射点密度高且发射均匀的特征,其场电子发射阈值电场较低(<1。
6) Field emission current
场发射电流
1.
The relationship of Field Emission current and electrical field strength is the main job of Field Emission test.
场发射电流与场强关系的测量是场发射测量的主要内容,一般是需要在数千伏的高压条件下测量纳安量级的弱电流,信号的测量和采集极易受外界干扰,目前国内外尚没有合适的测量电源。
补充资料：库鲁发射场(见航天器发射场)
库鲁发射场(见航天器发射场)
Kourou Launching Site
Kulu Fashechang库鲁发射场(Kourou Laune址ng site)见航天器发射场。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条