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1)  successive isochronical annealing
逐段等时退火
2)  isochronal annealing
等时退火
1.
Prediction on the characteristics of isothermal annealing by using isochronal annealing data;
利用等时退火法预估等温退火效应实验研究
2.
In this paper,the processes of structural relaxation of amorphous Ni-Si-B system alloys have been studied by means of measuring the changes of elctrical resis-tivity of them after isochronal annealing at various temperatures,and the oscillatingcurves relating the electrical resistivity changes to the annealing temperatures have beenobtained.
本文通过精密测定非晶态Ni-Si-B系合金的电阻率在不同温度下等时退火后的变化,研究了该合金的结构驰豫过程,得到其电阻率变化随退火温度而作振荡性起伏的关系曲线,并利用作者提出的结构缺陷形成机制对该振荡性曲线作出了比较合理的微观机理解释。
3.
The relations about radiation sensitive parameters with isothermal annealing time and isochronal annealing temperature were given.
对CMOS晶体管辐照后的等温、等时退火特性进行研究,给出辐照敏感参数在等温、等时退火过程中随退火时间、退火温度的变化关系。
3)  isothermal annealing
等时退火
1.
The annealing degree of isochronal annealing is close to that of isothermal annealing at 100 ℃ for 168 h.
2 5~ 2 50℃下的等时退火 ,其退火程度接近 168h的 10 0℃等温退火。
4)  isochronal and isothermal annealing
等时等温退火
5)  two-stage annealing
雨段退火
6)  stepped annealing
分段退火
补充资料:软化退火(见低温退火)


软化退火(见低温退火)
soft-annealing

rU0nhUO tUihUO软化退火(soft一annealing)见低温退火。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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