2) donor at shallow level
浅能级施主
3) host diner energy
施主-受主能级
4) energy level of donor and accepter
施主受主能级
5) donor impurity level
施主杂质能级
6) valley-orbit splitting
基态施主能级分裂
1.
The valley-orbit splitting is introduced into the inversion-layer charge model for silicon carbide based p-MOSFET.
通过引进基态施主能级分裂因素,对SiC基p-MOSFET的反型层电荷模型进行了改进。
2.
In SiC,the relations between the influence of valley-orbit splitting on ionization of dopant and doping concentration,temperature and the depth of dopant energy level were investigated systematically through theoretical computation.
对SiC中基态施主能级分裂对杂质电离的影响,与温度、掺杂浓度和杂质能级深度的关系进行了系统研究。
补充资料:大施主
【大施主】
(术语)于一切之人行大施者。无量寿经上曰:“我于无量劫不为大施主,普济诸贫穷,誓不成正觉。”
(术语)于一切之人行大施者。无量寿经上曰:“我于无量劫不为大施主,普济诸贫穷,誓不成正觉。”
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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