1) heavy duty electrical conductor
大功率导电体
2) semiconductor power amplification
半导体功率放大
1.
The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of GaAlAs/GaAs laser with semiconductor power amplification,and with a wavelength of 808 nm.
通过对波长808nm的GaA lAs/GaAs半导体功率放大激光器端面镀SiO减反射膜工艺过程,从理论和实验上分析了其涂层特性,透射率由无膜时的69%和32。
3) high power diode laser
大功率半导体激光器
1.
Research and Design on the Control System for High Power Diode Laser;
大功率半导体激光器控制系统的研制
2.
Laser transformation hardening was carried out on U74 rail steel by a self-developed high power diode laser.
使用自制的大功率半导体激光器对U74轨钢进行了相变硬化。
3.
Based on the characteristics of beam propagation of laser diode array(LDA),high power diode laser was coupled to a wedge-shaped fiber array.
首先从半导体激光器列阵的发光特性出发,利用楔形光纤排对大功率半导体激光器列阵光束进行耦合,最后得到一只含有19个纤芯,每个纤芯为200μm,数值孔径为0。
4) High power semiconductor laser
大功率半导体激光器
1.
The incident power ratio of front and back cavity facet coatings was deduced,and the importance in optimized designing of electric field intensity(EFI) distribution of back cavity facet coatings for 808nm high power semiconductor laser was explained.
从实际问题出发在以往腔面膜的研制基础上,选择适合制备808 nm大功率半导体激光器腔面的镀膜材料。
2.
In order to solve the heat radiation of high power semiconductor lasers,the internal thermal distribution of the lasers and the influence of the laser diodes sintered by different solders(In,SnPb,AuSn)on the thermal resistance of the lasers were analyzed by ANSYS finite element software and the steady thermal simulation method.
为了解决大功率半导体激光器的散热问题,利用有限元软件ANSYS,采用稳态热模拟方法,分析了半导体激光器内部的温度分布情况,对比分析了In、SnPb、AuSn几种不同焊料烧结激光器管芯对激光器热阻的影响。
3.
The high efficiency and high power semiconductor laser with multi-active regions, which are cascaded by reverse biased tunnel junction(s) can resolve the problems in theory and ov.
大功率半导体激光器在光通讯、医疗、军事、印刷和光泵浦等领域有着广泛的应用，然而当通过增加注入电流提高传统半导体激光器的光束出功率时，要受到电热烧毁和光腔面灾变性损坏(COD)的限制。
5) High power semiconductor lasers
大功率半导体激光器
1.
The recent progress of high power semiconductor lasers are reviewed with focusing on reliability,power conversion efficiency,wavelength stabilization and extended wavelength range.
大功率半导体激光器在军事领域和工业领域有着广泛的应用。
6) high-power semiconductor laser
大功率半导体激光器
1.
This paper gives a theoretical hypothesis witch explains the laser ablation of fiber end face by high-power semiconductor laser,and basic on the hypothesis we gained that coupling efficiency of the system is changing with time,such as ηt=η0t-aβmSk=η0t-aβρ.
本文提出大功率半导体激光器(LD)对光纤耦合界面的烧蚀的理论假设,得出系统耦合效率随时间的变化关系为ηt=η0t-αβmsk=η0t-αβρ。
2.
Based on the law of refraction in vector form,the laser beam propagation in an aspheric and asymmetrical laser beam collimation system from high-power semiconductor laser has been researched for spatial laser beam long-distance propagation.
为实现空间激光束的远距离传输,利用矢量折射定理研究了大功率半导体激光器发散光束经非球面、非轴对称准直系统的光传输特性。
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条