1) crystal orientation
晶体方位;晶体取向
2) crystal orientation
晶体取向
1.
The surface mapping and crystal orientation of body-centered cubic thin metal tungsten films of different thickness;
体心立方金属W薄膜晶体取向的膜厚尺寸效应及其表面映射
2.
Multi-scale simulation of the deformation in nano-indentation under different crystal orientations
不同晶体取向下纳米压痕的多尺度模拟
3.
The evolvement characteristic of crystal orientation of AZ31 magnesium alloy sheet at different channel clearances and effects of channel clearances on its microstructures and mechanical properties during equal channel angular rolling(ECAR) are investigated.
研究了不同通道间隙下,AZ31镁合金板材在等径角轧制过程中晶体取向的演化特征以及通道间隙对其显微组织和力学性能的影响。
3) crystallographic orientation
晶体取向
1.
Effects of crystallographic orientation on void growth and coalescence;
FCC晶体中晶体取向对孔洞长大和聚合的影响
2.
Optimization design of crystallographic orientation in single crystal turbine blade;
单晶涡轮叶片晶体取向优化设计
3.
It was found that the persistent slip bands(PSBs) might exhibit different dislocation features depending upon crystallographic orientation,such as ladder structures in the [■ 1 2] crystal and irregular or partially regular cell structures aligned along the primary sl.
结果表明,驻留滑移带(PSBs)的位错结构随晶体取向的不同可呈现出不同的形态,如:[■ 1 2]晶体中的楼梯结构和[■ 2 3]晶体中的沿主滑移面排列的不规则或较规则胞结构。
4) crystalline orientation
晶体取向
1.
The evolution of crystalline orientation and surface morphology of annealed thin tungsten films;
金属W薄膜晶体取向与表面形貌
2.
Based on the broad application prospect of nanoidentation in the material science area,the effect of sample preparation methods on the nanoidentation results of metals, relationship between micromechanical properties and crystalline orientation of grain in cubic metals,and application of the new analysis methods of nanoindentation data were studied in this paper.
基于纳米压入技术在材料科学领域广泛的应用前景,本文对制样方法对金属材料纳米压入测试结果的影响,立方晶系金属中各组成晶粒微观力学性能与晶体取向的关系,纳米压入数据分析新方法的应用进行了深入研究。
5) textured polycrystal
取向晶体
6) orientation relationship
晶体位向
1.
Single crystalline Cu and α-Al2O3(sapphire) with different crystallographic orientation relationships at the interface were diffusion-welded in vacuum with and without a thin film Nb intelayer Effects of the orientation relationship at the interface on the fracture energy of Cu/Al2O3, and Cu/Nb/Al2O3, diffusion-bonded joints were studied.
以单晶α-Al2O3陶瓷(蓝宝石)和单晶Cu为母材,采用真空扩散焊接获得具有两种不同的界面晶体位向关系的Cu/Al2O3扩散焊接头以及带Nb膜中间层的Cu/Nb/Al2O3扩散焊接头,研究了界面晶体位向关系对接头断裂能量的影响。
补充资料:晶体管-晶体管逻辑电路
晶体管-晶体管逻辑电路 transistor-transistor logic 集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路(DTL)中的二极管,改为使用多发射极晶体管而构成。TTL电路于1962年研制成功,基本门电路的结构和元件参数,经历了3次大的改进。同DTL电路相比,TTL电路速度显著提高,功耗大为降低。仅第一代TTL电路产品,就使开关速度比DTL电路提高5~10倍。采用肖特基二极管的第三代TTL电路,开关时间可缩短到3~5纳秒。绝大部分双极型集成电路,都是TTL电路产品。 |
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条