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1)  high resolution diffraction image
高分辨衍射象
2)  high resolution diffraction
高分辨衍射
3)  HRED
高分辨电子衍射
4)  high resolution diffraction attachment
高分辨衍射附件
5)  high dispersion diffraction image
高分散衍射象
6)  high-resolution X-ray diffraction
高分辨X射线衍射
1.
Combining Rutherford backscattering/channeling (RBS/C) and high-resolution X-ray diffraction (HXRD) measurements, we investigate the radiation damage in GaN films with various doses and angles of Mg~+_implantation.
结合卢瑟福背散射/沟道(Rutherford backscattering/channeling,RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction,HXRD)的实验测量,研究了不同剂量和不同角度Mg+注入GaN所造成的辐射损伤。
2.
Micropipes and low-angle boundaries in 6H-SiC (0001) wafer are determined by transmission polarized light microscopy, synchrotron X-ray topography and high-resolution X-ray diffraction method, respectively.
利用透射偏光显微术、同步辐射X射线形貌术、高分辨X射线衍射方法对 6H SiC(0 0 0 1)晶片中的微管和小角度晶界等缺陷进行了研究。
3.
In this thesis, high-resolution X-ray diffraction and transmission electron microscope were used to analyze the microstruction of GaN LED on sapphire substrate.
利用高分辨X射线衍射对GaN基LED外延片的超晶格结构进行了测量,得出了超晶格的结构信息。
补充资料:高分辨电子显微镜(见高分辨电子显微术)


高分辨电子显微镜(见高分辨电子显微术)
high resolution electron microscope

高分辨电子显微镜high resolution eleetronmieroseope见高分辫电子显微术。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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