1) high resolution diffraction attachment
高分辨衍射附件
2) high resolution diffraction
高分辨衍射
3) HRED
高分辨电子衍射
4) high resolution diffraction image
高分辨衍射象
5) high-resolution X-ray diffraction
高分辨X射线衍射
1.
Combining Rutherford backscattering/channeling (RBS/C) and high-resolution X-ray diffraction (HXRD) measurements, we investigate the radiation damage in GaN films with various doses and angles of Mg~+_implantation.
结合卢瑟福背散射/沟道(Rutherford backscattering/channeling,RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction,HXRD)的实验测量,研究了不同剂量和不同角度Mg+注入GaN所造成的辐射损伤。
2.
Micropipes and low-angle boundaries in 6H-SiC (0001) wafer are determined by transmission polarized light microscopy, synchrotron X-ray topography and high-resolution X-ray diffraction method, respectively.
利用透射偏光显微术、同步辐射X射线形貌术、高分辨X射线衍射方法对 6H SiC(0 0 0 1)晶片中的微管和小角度晶界等缺陷进行了研究。
3.
In this thesis, high-resolution X-ray diffraction and transmission electron microscope were used to analyze the microstruction of GaN LED on sapphire substrate.
利用高分辨X射线衍射对GaN基LED外延片的超晶格结构进行了测量,得出了超晶格的结构信息。
6) HRXRD
高分辨X射线衍射
1.
have been gained by analyzing eptaxial STO films with a high resolution X-ray diffractometer(HRXRD+ TAXRD).
本文应用高分辨X射线衍射(HRXRD+TAXRD)技术对外延生长的SrTiO3膜进行了分析,获得了有关该薄膜的晶体取向、衬底的结构特性以及弛豫态的点阵常数等信息,对今后改进SrTiO3系列样品生长工艺有重要的意义。
2.
The effect of annealing time on the epitaxial strain in GaN films was detailedly studied by high-resolution X-ray diffraction(HRXRD).
采用低压金属有机化学气相外延(LP-MOCVD)法生长Mg掺杂p型GaN薄膜,利用高分辨X射线衍射(HRXRD)技术研究不同退火时间对GaN薄膜中外延应变的影响。
补充资料：高分辨电子显微镜(见高分辨电子显微术)
高分辨电子显微镜(见高分辨电子显微术)
high resolution electron microscope
高分辨电子显微镜high resolution eleetronmieroseope见高分辫电子显微术。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条