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1)  ESVCD (epitaxial silicon variable capacitance diode)
外延硅变容二极管
2)  gold-epitaxial silicon high-frequency diode
金-外延硅高频二极管
3)  epitaxial diode
外延二极管
4)  varactor diode
变容二极管
1.
Using the periodical surface′s character of band gap and impedance transition of electromagnetic crystal structure such as photonic band gap(PBG),frequency selection surface(FSS),high impedance surface(HIS) and so on,the varactor diode was put onto the approximate HIS′s surface to join each cell of metal on top layer to realize the electronic control for periodical structure.
利用如光带隙电磁结晶结构、高阻抗结构等周期性结构的带隙特性和阻抗特性,通过在类似高阻抗表面的周期性金属单元表面铺设有源器件———变容二极管,控制周期性结构的性能,建立有源周期性结构,影响入射电磁波的传播特性,实现对反射波束的指向的有源控制和有效改变。
2.
In this method, the capacitance of the varactor diode is changed by voltage.
文章详细介绍了一种225MHz-400MHz压控调谐滤波器的实现方法,该方法主要是通过电压改变变容二极管的电容,从而改变带通滤波器的中心频率,从而实现压控滤波。
3.
In this paper,the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.
本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。
5)  Variable Capacitance Diode
变容二极管
1.
The Pre-condition for Variable Capacitance Diode Frequency Modulator Obtaining the Linear Frequency Modulation;
变容二极管调频器获得线性调频的条件
2.
It is confirmed by electrical measurements of I-V,C-V,C-f,and deep level transient spectrum that this is a variable capacitance diode of linear slowly varied heterojunction.
采用等离子体增强化学气相沉积技术和电子束蒸发技术制备了一种新型的线性缓变异质结变容二极管———Au/Cr合金(电极)/multi-layer(p)nc-Si∶H/(n)c-Si/(电极)Au/Ge合金结构。
6)  varactor [英][və'ræktə]  [美][və'ræktɚ, væ-]
变容二极管
1.
Gives an analysis on the non linearity in frequency modulation when a varactor modulates directly in a FM ranging fuze,and shows its influence on the precision of ranging.
分析了调频定距引信中采用变容二极管直接调频时调制的非线性及其对定距精度的影响。
2.
The transformation between digital signal and DC voltage was made with D/A converser and high voltage amplifier; varactors were used for tuning components; the bandpass filter was a combline microstrip line one, its dimension was presented.
采用数模转换器和高压运放实现数字信号与直流电压的转换;以变容二极管作为调谐元件;带通滤波器采用梳状微带线结构,并给出了结构参数。
3.
The recent developments in varactor are reviewed, such as large capacitance rate, dual ion implantation, embedded in tuner, multi-varactor cell, super-miniaturization, low voltage and varieties of application.
评述当前变容二极管的新动态,如大电容比、双离子注入、嵌入到调谐器中、多管芯化、超小型化、低电压化和应用多样化等。
补充资料:变容二极管
又称“可变电抗二极管”。利用pn结结电容随反偏压增大而减小的特性制成的半导体二极管。材料多为硅或砷化镓。用于谐振电路时为电调变容二极管,用于参量放大时为参放变容二极管,在功率源中作倍频和移相用时为功率阶跃变容二极管。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条