Because of the great potential of SiC MOSFETs and circuits, in this paper, the characteristics of 6H-SiC PMOSFETs are studied systematically, emphasizing on the effects of interface state and S/D series resistance on SiC PMOSFETsFirstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented.

The equivalent series resistance of silicon solar cell can influence its straight volt-ampere property and short-circuit current, but have no influence on open-circuit voltage.

Considering the influence of residual flux and applying controlled closing technology,transformer inrush current is reduced by combing controlled closing technology and series resistance,setting proper resistance and cut time.

By deducting the circuit equation of solar cells under illumination,simple mathematical expressions to calculate the series resistance and the shunt conductance of solar cells were presented.

In SOI circuits designed with body contact structure, floating body effect is generally suppressed, but the existence of body series resistance still induces “local floating effect” in the part of the body away from the body contact.