1) dark-conductivity
无照导电性，暗导电率
2) dark conduction
无照电导率
3) Dark conductivity
暗电导率
1.
For obtaining high dark conductivity of p-type μc-Si∶H thin films with high crystalline volume fraction,the major processing parameters of the substrate temperature,hydrogen dilution ratio and boron doping ratio are primarily optimized by the method of orthogonal test.
Raman光谱和电导率测试结果表明:(1)在实验选取的参数范围内,衬底温度是影响薄膜暗电导率和晶化率的最主要因素,其次是氢稀释比,硼烷掺杂比的影响相对较小;(2)通过正交优化,获得了暗电导率为2。
2.
The microstructure ,morphology and electric property of thin films were investigated by XRD, SEM and dark conductivity measurements.
退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表面形貌,用电导率设备测试其暗电导率。
3.
The films are characterized and analyzed by Raman spectra,the effect of crystallization ratio on dark conductivity is investigated.
用Raman散射谱进行结构表征和分析,研究了薄膜晶化率对暗电导率的影响。
4) dark conduction
无照电导，无照电流，暗电流
5) photo-and dark-conductivity
光、暗电导率
6) inconductivity
[,inkɔndʌk'tiviti]
无传导性,无电导率
补充资料：电导率(见电阻率)
电导率(见电阻率)
conductivity
d!日nd日O}已电导率(eonduetivity)见电阻率。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条