1) conductor contact resistance
导体的接触电阻
2) contact resistance
接触电阻
1.
Stable distribution analysis to statistical evaluation of contact resistance in aluminum alloy spot welding;
基于稳定分布的铝合金点焊接触电阻
2.
On the contact resistance between graphite/polypropylene composite plate and carbon paper;
石墨／聚丙烯复合板与碳纸间的接触电阻
3.
Study of prediction method for contact resistance based on experiment constitutive relation;
基于实验本构关系的接触电阻预测方法研究
3) interfacial contact resistance
接触电阻
1.
The electrochemical methods were investigated in a simulated PEMFC environment and the volt-ampere technique was applied to measure interfacial contact resistance between the sample and carbon paper.
以304不锈钢为研究对象,采用电化学方法测定其在模拟PEMFC环境下的极化曲线和对应于PEMFC工作电位下的恒电流极化曲线,用伏安法测量304不锈钢表面氧化膜/钝化膜与碳纸之间的接触电阻。
2.
The 304 stainless steel treated by electroplating Cr and plasma-assisted nitriding processes was investigated by electrochemical methods in the simulated PEMFC environments, and interfacial contact resistance between the samp.
测定了经过镀铬后再离子氮化的304不锈钢在模拟PEMFC环境下的电化学性能,测量了氮化层与碳纸之间的接触电阻。
3.
The interfacial contact resistance between the sample and carbon paper are measured with volt-ampere technique.
以304不锈钢做为研究对象,测定了其在模拟PEMFC环境下的极化曲线,极化时间分别为4 h和10 h的交流阻抗谱,用伏安法测量了304不锈钢表面氧化膜/钝化膜与碳纸之间的接触电阻。
4) contacting resistance
接触电阻
1.
In order to reduce contacting resistance of bridge shaped contact and lower down temperature rise,improvement design was carried out for DW450-1100 universal circuit breaker bridge shaped structure.
为减小桥形触头的接触电阻,降低温升,对DW450-1600万能式断路器的桥形触头结构进行了改进设计。
2.
In order to determining the fire risk of plug and receptacle in different connecting resistance,the plugs rated 10 A and 16 A are used to study the temperature rising in the different contacting resistance and current.
为了确定插头插座在不同接触电阻情况下的火灾危险性,选用了常用的额定电流分别为10A和16A的两种插头插座,研究在不同的接触电阻条件下以及在相同的接触电阻下通过不同电流时插头插座的升温情况。
3.
In order to reduce the contacting resistance of contacts,to reduce temperature rise of contacts,improved design was made to the structure of contact.
为减小触头的接触电阻,降低触头的温升,对触头的结构进行了改进设计。
5) specific contact resistance
接触电阻率
1.
Calculation of specific contact resistance in ohmic contacts;
欧姆接触中接触电阻率的计算
2.
But Ohmic contacts on p-type GaN with low specific contact resistance are more difficult to realize than those on n-type GaN.
本文介绍了利用金属Au、Cr/Au在p型GaN材料上做了接触性能研究,通过退火等实验获得了较理想的欧姆接触,测试后计算出Au、Cr/Au与p型GaN材料间的接触电阻率分别为7。
3.
The measurements of the specific contact resistance ( ρ c) were carried out for Ti/Au ohmic contact to heavily boron\|doped p\|diamond (～10 20 cm -3 ) by the transmission line model (TLM).
采用传输线模型测量了重B掺杂 p型金刚石薄膜 (约 10 2 0 cm-3 )上Ti/Au欧姆接触电阻率 ρc,测试了 5 0 0℃退火前后及大电流情况下的I V特性 ,研究了退火对 ρc 的影响 。
6) contact resistivity
接触电阻率
1.
0×10~(18)cm~(-3)),the experi- ment shows that the contact resistivity keeps unchanged and shows good temperature reliability when the stor- age temperature under 300℃during the storage time of 0～24 hours;but the ohmic contact has shown evi- dent degeneration after the storage at 300℃for 24 hours and at 500℃for 24 hours respectively.
0×10~(18)cm~(-3))的欧姆接触特性,试验结果标明,当测量温度低于300℃时,存储时间为0～24h,其接触电阻率基本不变,表现出良好的温度可靠性;分别经过300、500℃各24h高温存储后,其欧姆接触发生了较为明显的退化,且不可恢复。
2.
To obtain ohmic contact to n-GaN with a low contact resistivity, Cr/Au/Ni/Au metallic system that was fabricated in n-GaN materials has been developed.
为了获得n-GaN的低接触电阻的欧姆接触,采用Cr/Au/Ni/Au金属化系统与n—GaN形成欧姆接触,并对其不同温度下的接触电阻率进行了测试分析。
3.
The best alloying temperature is 220℃ and contact resistivity exhibited about 6.
研究了Ａｇ／ＡｕＧｅＮｉ／ｎ－ＧａＳｂ在１５０℃一４５０℃下合金处理对欧姆接触的影响，最佳合金温度为２２０℃，此时接触电阻率为６。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条