1) static dissipative material
静态损耗材料
2) loss material
损耗材料
1.
The Salisbury screen s retro-reflection coefficient formula was given,which satisfied the general matching law and provided a theoretical basis for the new direction in which the loss material was used as the insulating layer in Salisbury screen s optimized design.
将广义匹配规律应用于Salisbury屏的反射性质研究中,给出了满足广义匹配规律Salisbury屏的后向反射系数公式,为损耗材料作为隔离层Salisbury屏的优化设计新方向提供了理论基础,并对具体优化设计中电磁参数的匹配问题提供方向性的指导。
3) low-loss material
低损耗材料
1.
In this paper, the complex permittivity measurement of low-loss materials using dielectric resonator and split post dielectric resonator(SPDR) are researched.
实验中采用本系统对低损耗介质基片和薄膜材料的测试取得了较为满意的结果,本文提出的介质谐振器和分离介质谐振器法测量低损耗材料的复介电常数技术可对多种材料进行测量,具有较强的实用性。
4) lossless material
无损耗材料
5) static wear-leveling
静态损耗均衡
1.
In terms of NAND flash memory,by using threshold value to control the triggering condition of static wear-leveling,and by improving traditional garbage collecting scheme,this paper puts forward a wear-leveling algorithm which is suitable for embedded memory,which avoids the complexity of traditional algorithm.
针对目前常用的NANDF lash存储器,利用阈值控制静态损耗均衡的触发条件,改进了传统的垃圾回收方案,提出了一种适用于嵌入式存储设备的静态负载均衡算法,避免了传统算法的复杂性。
6) multi-layer loss materials
多层损耗材料
1.
In this paper,the formula of reflectivity of multi-layer loss materials was presented.
给出了多层损耗材料反射系数公式,使用具体材料的电磁参数,以三层结构为例进行了具体方案的设计,并用自行开发的软件进行了计算机辅助设计,绘制了相关的理论计算曲线。
补充资料：介质损耗角正切试验(见电容率与损耗因数试验)
介质损耗角正切试验(见电容率与损耗因数试验)
dielectric loss tangent test
)!eZh.sunhooJ一002匕engq一e sh一yon介质损耗角正切试验(dieleetri。1055 tangenttest)见电容率与损耗因数试验。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条