1) slip dislocation
滑移位错
2) dislocation slip
位错滑移
1.
The experimental results show that strain rate doesn't affect the fracture mechanism of intragranular dimple and mainly dislocation slipping;the tensile strength is increased slightly along with the increase of strain rate,however,the elongation doesn't decrease in general which is decreased firstly and raised later with the increase of strain rate,the high s.
结果表明,应变速率对10Ni5CrMoV钢的断裂方式没有影响,拉伸试样均为塑性断裂,断裂微观机制主要是位错滑移;抗拉强度随应变速率增加而略有增加;伸长率随应变速率的增加先下降后上升,但总体无降低;高应变速率并未造成该钢的脆化。
2.
Through the analyses of the X-ray diffraction data and the corresponding crystallography, it was found that during the first pass of ECAP, the main deformation mode of α phase is {1011}(1012} twinning, while during the following passes the main deformation mode is dislocation slip.
α相在第1道次ECAP过程中主要的变形方式是{1011}〈1012〉孪生,在随后道次的ECAP过程中主要变形方式为位错滑移,变形方式的转变主要是由于ECAP造成的组织细化效应;对于β相,各道次ECAP的主要变形方式均为位错滑移。
3.
Twinning and dislocation slip have been proven to be the dominant model of plastic deformation when the temperature is bel.
当温度在动态再结晶温度以下时,材料的塑性变形主要是:孪生、位错滑移。
3) dislocation sliding
位错滑移
1.
In the process of superplastic deformation, the dislocation sliding has important cordinating effect, so that the grain boundary sliding proceeds easily.
合金在超塑变形中，位错滑移起重要协调作用，使晶界滑动易于进行。
2.
It is of no significance that gold is transported from the inside of pyrite in which gold atoms diffuse via defects such as dislocations if there is no dislocation sliding in the pyrite.
分析了高温高压高应变速率条件下黄铁矿中的晶格金迁移的动力学机制后认为 :黄铁矿晶格中的金原子趋向于向位错等缺陷处扩散 ;在无位错滑移的情况下 ,晶格金原子在位错线等缺陷中扩散的扩散方式对其从黄铁矿内部迁移出来无实际意义 ;在高温高压高应变速率 [( 1 0 - 8～ 1 0 - 4) /s]条件下黄铁矿变形以位错滑移为主 ,金原子伴随着位错滑移一起迁移 ,最终迁移进入裂隙 ,增加了与成矿流体接触的机会。
4) Dislocation creep
位错滑移
1.
25, respectively, GBS and dislocation creep appeared to dominate the deformation process, consistent with the SEM examination.
25)则对应于位错滑移机制。
5) glide-set dislocation
滑移态位错
6) dislocation gliding theory
位错滑移理论
1.
Based on the relationships between stress and strain in an arbitrary coordinate system, the elastic theory of crystal and the dislocation gliding theory, the critical thicknesses of HgCdTe/CdZnTe oriented in the [111] and [211] directions are calculated, and the dependence of the critical thickness of HgCdTe on substrate composition and film composition are studied.
基于在任意坐标系内应力与应变的关系、晶体弹性理论和位错滑移理论,研究了生长方向分别为[111]和[211]晶向,HgCdTe外延薄膜临界厚度与CdZnTe衬底中Zn组分和HgCdTe外延层中Cd组分的关系。
补充资料：不全位错
不全位错
partial dislocation
不全位错partial disloeation伯格斯矢量不是晶格恒同平移矢量的位错。它是堆垛层错的边界，也即是层错与完整晶体部分的分界线。以fcc晶格为例，最常。二‘。一‘，，，、~，，一一，、，、二加，‘爪1，，，八、~，.I见的是在{111}类型的面上通过操作:①告<112>类型2.“J~阵、“‘，~~曰刁~一~一一’「‘~6、““’~~滑移;②抽去一个{111}层，并使上下两岸复合;③插入一个{111}层。这3种操作均造成层错，此层错的边界即是不全位错。分别称为肖克利不全位错， 1‘，，。、0=~不Lll乙J O负弗兰克不全位错，正弗兰克不全位错，。一告〔“‘〕。一奇〔“‘〕。 不全位错复杂之处在于它必然与层错相联系而存在，所以它的形式和运动均受层错之制约。例如上述肖克利不全位错只能在{111}面上作滑移，而弗兰克不全位错根本不能滑动。除fcc晶体外，在hcp、bcc、金刚石结构及其他许多实际晶体中，不全位错是很常见的。一个全位错可以分解为两个或多个不全位错，其间以层错带相联，通常称为扩展位错。 (杨顺华)
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参考词条