The aim of the work was to make the comparison of the effect of cerium ion implantation with that of niobium ion implantation by using a MEVVA source at the energy of 40 keV with a dose ranging from 1×1016 ions/cm2to 1×1017 ions/cm2 at the maximum temperature of 130℃.

An overview of the FIB direct write technique,applications in milling,implantation,and deposition is given.

The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose.

Influence of space charge effect on the axial injection of high intensity cyclotrons;

Numerical simulation is used to optimize the injection pattern of polymer enhanced foam flooding.

Based on the classical molecular dynamics method and TLHT potential model,the injection processes of He atom into SWCNT with wall defects of different radius are studied.

The SiO_2-Si Interfacial Structure Modification Introduced by Fe￣+ and H￣+ Ions Implantation;

Molecular dynamic simulations, utilizing the Tersoff many-body potential, are u sed to investigate the microscopic processes of a single boron atom with an ener gy of 500 eV implanted into the diamond (001) 2×1 reconstructed surface.