1) translation gliding
直移滑动;晶体滑移
2) crystal slip
晶体滑移
1.
Under the framework of crystal slip theory,a θ model that can describe the anisotropic creep of Ni-base single crystal(SC) alloy was built by the θ mapping method to the crystal directional problem of Ni-base single crystal turbine bladecreep.
针对镍基单晶涡轮叶片蠕变的晶体方向性问题,运用θ映射法,在晶体滑移理论框架下,建立了能够描述镍基单晶合金各向异性蠕变的θ模型。
4) glide
[英][ɡlaɪd] [美][glaɪd]
滑动，滑移
5) seismically-induced sliding movements
滑动体位移
6) grain boundary sliding
晶界滑移
1.
As the grain sizes are decreased,the transition of deformation mechanism from partial dislocation emission from grain boundaries and twinning to grain boundary sliding and grain rotation in face-centered-cubic nano-crystalline metals is summarized.
综述了纳米面心立方金属的变形机制随晶粒尺寸的减小而发生的变化,即变形机制由晶界处发射不全位错、形成孪晶转变为晶界滑移、晶粒转动。
2.
The following grain size effects are analyzed; on the contributions of various mechanisms including diffusion creep,grain boundary sliding and dislocation creep to the total strain, and on the grain boundary sliding which is a dominant mechanism in superplastic deformation.
分析了晶粒尺寸在各种机制中对总变形的影响;晶粒尺寸不同时材料变形的微观特征;晶粒尺寸对晶界滑移速率的影响。
3.
For the latter,there are two different types,attributed to liquid phase at grain boundary and grain boundary sliding respectively.
后者依材料流动形式不同又分为由液相引起和由晶界滑移引起的超塑性。
补充资料：晶体管-晶体管逻辑电路
| 晶体管-晶体管逻辑电路 transistor-transistor logic 集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。 |
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条