1) burial layer
掩埋层
2) buried oxide
掩埋氧化层
1.
Experiments show that total dose radiation effect in buried oxide of SOI(Silicon on Insulator) MOS is obviously dependent on bias condition.
实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关。
2.
And next,MEDICI simulation and a numerical model are utilized to simulate the electric field inside the buried oxide and fraction of hole capture,respectively.
随后分别用MEDICI模拟软件和数值模型模拟掩埋氧化层中的电场强度与空穴俘获率。
3) buried diffused layer
掩埋扩散层
5) pipeline burial
管道掩埋
6) buried tunnel
掩埋巷道
1.
In this paper, formula for calculating cover pressures of buried tunnel at different depth is deduced.
本文推导了不同掩埋深度的掩埋巷道顶板压力计算公式。
补充资料：掩埋
1.埋葬。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条