1) forward blocking voltage
正向阻断电压
1.
How to control and adjust the forward blocking voltage and the gate cathode breakdown voltage has been discussed.
分析了 SITH结构的掺杂电阻率、N-基区厚度、沟道尺寸以及终端结构对正向阻断电压的影响 ,分析了其横向自掺杂、沟道尺寸、外延层以及相关因素对栅 -阴极击穿电压的影响 ,讨论了如何进行正向阻断电压和栅 -阴极击穿电压的控制和调
2) V_(DRM)/V_(RRM)
正(反)向阻断电压
3) forward biocking junction
正向阻断结
4) forward resistance
正向电阻
5) blocking voltage
阻断电压
1.
The numerical computation results shown that the above formula which in connection with the empirical expressions of effective ionization rate confficient and theavalanche multiplication factor parameter is a method in designing the blocking voltage of ASCRquickly and exactly.
在有效碰撞电离率近似下，推导出给定正向阻断电压和电流放大系数的ＡＳ－ＣＲ长基区参数满足的关系式。
2.
First, the factors that influence the blocking voltage BVAK of power static induction thyristor (power SITH) are discussed and some new anode structures are proposed to improve it.
分析了影响电力静电感应晶闸管阻断电压BVAK的因素,提出了提高BVAK的方法,并构造了几种阳极结构。
6) peak forward-blocking voltage
峰值正向阻塞电压
补充资料：反,反-4,4'-双(4-正丙基环己基)-1,1'-联苯
CAS：85600-56-2
分子式：C30H42
分子质量：402.65
中文名称：反,反-4,4'-双(4-正丙基环己基)-1,1'-联苯
英文名称：trans,trans-4,4'-bis(4-n-Propylcyclohexyl)-1,1'-biphenyl；CBC33；[trans(trans)]-4,4'-bis(4-propylcyclohexyl)-1,1'-biphenyl；ZLI-1987
分子式：C30H42
分子质量：402.65
中文名称：反,反-4,4'-双(4-正丙基环己基)-1,1'-联苯
英文名称：trans,trans-4,4'-bis(4-n-Propylcyclohexyl)-1,1'-biphenyl；CBC33；[trans(trans)]-4,4'-bis(4-propylcyclohexyl)-1,1'-biphenyl；ZLI-1987
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条