1) wafer gettering
晶片吸除
2) gettering
[英]['getəriŋ] [美]['gɛtərɪŋ]
吸除
1.
The Inf luences of the Combined Gettering Technology on the Properties of Silicon Epitaxial Wafers(N/N￣+);
综合吸除对硅外延片（N／N~＋）性能的影响
2.
Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.
高注量的氦注入硅中并经热处理所形成的微孔,对金属原子的吸除作用已为大量的研究所证实。
3.
Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device.
所以需要减小有源区中金属杂质的浓度，通常采用吸除的方法把金属杂质从器件有源区吸收到有源区之外预先形成的Sink(陷阱)中。
3) wafers
[英]['weifə] [美]['wefɚ]
晶片
1.
Double-sided polishing process is a precise machining method for silicon wafers.
晶片在双面抛光加工过程中具有多向运动、受力复杂、表面材料微细去除的特征,晶片的运动和受力是影响双面抛光加工质量的主要因素。
4) platelets
片晶
1.
SiC platelets/C preform was infiltrated with liquid silicon to prepare reaction bonded silicon carbide(RBSC) materials.
以液Si浸渗SiC片晶和C的坯体制备了SiC片晶增韧反应烧结SiC陶瓷材料,讨论了SiC片晶的掺加分数及烧结温度对材料显微结构和力学性能的影响,并比较了所得材料与传统反应烧结材料的力学性能。
2.
Advances in the development of ceramies toughened with whiskers, particles or platelets are reviewed with primary focus on toughening mechanism by crack bridging process-es (e.
讨论了用晶须、颗粒或片晶增韧陶瓷在断裂韧性和强度上的发展。
5) wafer
[英]['weɪfə(r)] [美]['wefɚ]
晶片
1.
CdSe Detector Wafer Surface Treatment and Passivation Study;
CdSe探测器晶片表面处理和钝化研究
2.
Free-pyro black LiNbO_3 and LiTaO_3 wafers were prepared successfully by chemical reduction at (700 °C) and 450 °C respectively under a mixed atmosphere of CO_2 and H_2.
采用化学还原工艺,在CO2与H2混合气氛下对LN和LT晶片分别进行700°C和450°C退火处理,成功地制备了LN和LT黑色晶片。
3.
The wafer edge grinding technique of the semiconductor technology was discussed,and the feature was analyzed.
对半导体工艺中晶片的边缘磨削技术进行了论述,分析了晶片边缘磨削技术的特点,在此基础上,提出了一种高效、可靠的晶片边缘磨削方法。
6) platelet
[英]['pleɪtlət] [美]['pletlət]
片晶
1.
The microstructure and mechanical properties of in situ A12O3 platelet/Ce-TZP composites were studied.
研究了原位生长Ａｌ２Ｏ３片晶／Ｃｅ－ＴＺＰ复合材料的显微结构与力学性能。
2.
form cobalt hydroxides were synthesized through a controlled crystallization process under the certain mixing intensity, Co 2+ concentration, pH value and the protect of the inert gas and the products was fine platelet powder with high purity and high crystallinity.
通过控制结晶法，在一定的搅拌强度、一定的Ｃｏ２＋ 浓度、一定的ｐＨ值和惰性气体保护的条件下合成出高纯度和高结晶度的β－Ｃｏ（ＯＨ）２ 的片晶细粉。
补充资料：外吸除(见单晶片的吸除技术)
外吸除(见单晶片的吸除技术)
ering outside get
乞术。外吸除outside getteri眼见单晶片的吸除刁
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条