1) narrow gap region
窄禁带区
2) bandgap narrowing
禁带变窄
1.
The bandgap narrowing is distributed between the conduction and valence bands,according to the Jain-Roulston model,and its effects on the currents of abrupt AlGaAs/GaAs HBTs including the self-heating effect,are analyzed.
基于禁带变窄量在导带和价带之间的分布比例与掺杂浓度相关的Jain-Roulston模型,研究了重掺杂能带结构的变化对突变异质结HBT电流影响。
4) bandgap narrowing
禁带变窄量
1.
An empirical method is proposed for determining the total bandgap narrowing in the base of a SiGe HBT,which is a function of temperature,impurity concentration and germanium fraction.
分析并计算了不同温度、掺杂浓度以及不同材料的禁带变窄量 ,与实验数据进行了对比 ,两者符合得很好 。
2.
The apparent bandgap narrowing in bipolar transistors with ion implanted and epitaxial Si 0.
采用一种新的方法计算双极器件中离子注 B硅基区和原位掺 B的锗硅基区禁带变窄量 。
5) small gap materia
窄禁带材料
补充资料:禁的
1.见"禁得"。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条