1) multilayer semiconductor device
多层半导体器件
2) multiple unit semiconductor device
多元半导体器件
3) binistor
[bai'nistə]
四层半导体开关器件
4) Semiconductor devices
半导体器件
1.
Accelerators simulation experiment on single event effects in semiconductor devices;
半导体器件单粒子效应的加速器模拟实验
2.
In order to improve the forward conduction characteristics of silicon semiconductor devices, a comprehensive study of the influences of boron diffusion, phosphorous diffusion, doping concentration distribution in P~+-P region of sintered Al-Mo electrode and the minority carrier life on the forward conduction characteristics is performed.
为提高硅半导体器件的正向导电特性,文中对器件浓硼扩散、磷扩散和烧结铝电极后P~+-P区掺杂浓度分布、少子寿命等因素的影响进行了实验研究。
3.
They have extensive application prospect in fields such as high brightness light emitting diodes,short wavelength laser diodes,high performance UV detector,and high temperature,high frequency,large power semiconductor devices.
GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。
5) semiconductor device
半导体器件
1.
Simulation & Analysis of a Hydrodynamic Model of Semiconductor Devices by a Finite Element Method;
半导体器件动力模型的有限元法仿真与分析
2.
Research for incompetent sources of semiconductor devices which are not up to the standard in DPA;
半导体器件DPA不合格的根源研究
3.
A Galerkin-MMOCAA scheme for a semiconductor device simulation behavior of a semiconductor device;
一类半导体器件模拟的Galerkin-MMOCAA方法
6) binistor
[bai'nistə]
四层半导体开关器件,pnpn开关器件
补充资料:多元
1.多种多样。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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