1) microwave semiconductor
微波半导体器件
2) submicron semiconductor device
亚微米半导体器件
1.
This paper presents the building procedures of hydrodynamic model for submicron semiconductor device simulation.
主要讨论了亚微米半导体器件模拟的流体动力学模型方程的建立过程。
3) sub-micron MOSFET
深亚微米半导体器件
4) Semiconductor devices
半导体器件
1.
Accelerators simulation experiment on single event effects in semiconductor devices;
半导体器件单粒子效应的加速器模拟实验
2.
In order to improve the forward conduction characteristics of silicon semiconductor devices, a comprehensive study of the influences of boron diffusion, phosphorous diffusion, doping concentration distribution in P~+-P region of sintered Al-Mo electrode and the minority carrier life on the forward conduction characteristics is performed.
为提高硅半导体器件的正向导电特性,文中对器件浓硼扩散、磷扩散和烧结铝电极后P~+-P区掺杂浓度分布、少子寿命等因素的影响进行了实验研究。
3.
They have extensive application prospect in fields such as high brightness light emitting diodes,short wavelength laser diodes,high performance UV detector,and high temperature,high frequency,large power semiconductor devices.
GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。
5) semiconductor device
半导体器件
1.
Simulation & Analysis of a Hydrodynamic Model of Semiconductor Devices by a Finite Element Method;
半导体器件动力模型的有限元法仿真与分析
2.
Research for incompetent sources of semiconductor devices which are not up to the standard in DPA;
半导体器件DPA不合格的根源研究
3.
A Galerkin-MMOCAA scheme for a semiconductor device simulation behavior of a semiconductor device;
一类半导体器件模拟的Galerkin-MMOCAA方法
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条