1) micron lithography
微米结构光刻
2) submicron photolithography
亚微米光刻
1.
Optical proximity correction for improving pattern quality in submicron photolithography;
光学邻近校正改善亚微米光刻图形质量
3) submicron lithography
亚微米光刻
1.
In order to study the feasibility of submicron lithography using second harmonic light of a copper vapor laser(CVL), a 1∶1 catadioptric projection lens, and an illumination system which consists of a rotating diffuser and a ligth pipe, are designed and constructed.
３ｎｍ的铜蒸气激光倍频光在亚微米光刻中的可行性，设计了带宽为１ｎｍ的１１折反射式投影光刻物镜和一个带散射板的光管式均匀照明系统，获得了０。
2.
Experimental results of deep submicron lithography with a excimer laser are reported in this paper.
报道用远紫外准分子激光进行亚微米光刻的实验结果。
5) Sub-half micron lithography
亚半微米光刻
6) Deep submicron lithography
深亚微米光刻
补充资料：2,2'-[亚甲基二(2,1-亚苯基氧亚甲基)]二环氧乙烷
CAS：54208-63-8
分子式：C19H20O4
中文名称：双酚二环甘油醚
2,2'-[亚甲基二(2,1-亚苯基氧亚甲基)]二环氧乙烷
英文名称：2,2'-[methylenebis(2,1-phenyleneoxymethylene)] bis-Oxirane
Methylenebis(o-phenol), 3-propylene oxide ether
2,2'-[methylenebis(2,1-phenyleneoxymethylene)]bis-oxiran
分子式：C19H20O4
中文名称：双酚二环甘油醚
2,2'-[亚甲基二(2,1-亚苯基氧亚甲基)]二环氧乙烷
英文名称：2,2'-[methylenebis(2,1-phenyleneoxymethylene)] bis-Oxirane
Methylenebis(o-phenol), 3-propylene oxide ether
2,2'-[methylenebis(2,1-phenyleneoxymethylene)]bis-oxiran
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条