1) low concentration doping
轻微掺杂
2) Boron light doped
硼轻掺杂
3) lightly doped drain
轻掺杂
1.
For the purpose of reducing the p Si TFT off state current, the structures of lightly doped drain (LDD) were used.
采用同型结模型模拟计算了源漏轻掺杂结构的关态漏极电流 ,同时考虑热电子效应修正漏极电流模拟结果 ,使漏极电流降低到 1 0 - 11A量级 ,晶体管的开关电流比值达到 1 0 6量级。
4) light dope
轻微掺染
5) LDD MOSFET
轻掺杂漏MOSFET
6) lightly doped drain(LDD)
轻掺杂漏区
补充资料:掺杂铕的硼锶氧化物
CAS:71786-49-7
中文名称:掺杂铕的硼锶氧化物
英文名称:Boron strontium oxide, europium-doped;boric acid , strontium salt, europium-doped;boric acid , strontium salt,europium-doped;Boron strontium oxide,europium-doped
中文名称:掺杂铕的硼锶氧化物
英文名称:Boron strontium oxide, europium-doped;boric acid , strontium salt, europium-doped;boric acid , strontium salt,europium-doped;Boron strontium oxide,europium-doped
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