1) hole quasi fermi level
空穴准费米能级
2) quasi-Fermi level
准费米能级
1.
For the grain-boundary potential bather model with acceptor defect layers on grain surface, the spatal variation of the steady-state quasi-Fermi level near grain boundary is calculated in the diffusion limit For an n-type polystalline semiconductor,most of the variation occurs in the near grain boundary region on the revere-biased side.
本文由受主缺陷扩散层模型详细计算了扩散极限下晶界附近的准费米能级的空间变化。
3) Fermi level
费米能级
1.
By using real-place recursion method,Fermi level and total bond order integral between Cu and another neighbor elements Y,La and Zr on the crystalline phases were calculated.
通过计算机编程建立Zr2Cu晶体相中以Cu原子为中心的原子团簇模拟Zr基非晶中二十面体原子团簇模型,应用实空间的递推方法计算了Zr2Cu晶体相中的费米能级及团簇中Cu与近邻合金元素Y、La、Zr的键级积分。
2.
It is found that the Ag particles with sharper edges and wider terrace between steps have more electrons at Fermi level.
分析了Ag颗粒的形貌对其费米能级的影响。
3.
The orbital binding energy and Fermi level of individual element of amorphous and crys- tallized Zr_(55)Cu_(30)Al_(10)Ni_5 alloys were measured by XPS.
测定了大块非晶合金 Zr_(55)Cu_(30)Al_(10)Ni_5晶化前后的费米能级和各元素的电子结合能,研究了非晶合金的电子结构特征和电击穿行为。
4) Fermi energy
费米能级
1.
According to the condition of elctroneutrality, formulae of Fermi energy are deduced associated with computation results of electron and void concentration ,when donor and acceptor exist at the same time.
利用电中性条件,结合电子和空穴浓度计算式,推导出了当施主和受主同时存在时,费米能级的计算式,并且根据实际应用条件作了讨论,推导了各种条件下的费米能级计算公式。
2.
A new graphic method is described for calculating the Fermi energy, the free electron and free hole concentrations, and the ionized impurity concentrations in semiconductors material with the drawing function of Matlab software.
介绍了一种新的利用Matlab软件绘图功能的图解法计算费米能级以及载流子浓度的方法 ,这种方法舍弃了传统的繁琐的数值计算及计算机编程 ,具有简单、方便、直观等特点 。
3.
According to the condition of electroneutrality, a general formula of Fermi energy in one-doped semiconductor is deduced.
利用电中性条件，导出了掺单一杂质半导体费米能级的普适公式，在具体应用时可作相应简
5) Fermi energy level
费米能级
1.
The Fermi energy level of electron in metal can be measured.
高校中不少实验室具有半导体探头能谱仪，可扩展用作正电子湮没多普勒增宽谱仪，并测量金属中电子的费米能
6) hole in deep lever defect
深能级空穴
补充资料：费米能级
分子式：
CAS号：
性质：电子在固体(金属、半导体或绝缘体)或电解质溶液中的化学势。符号为EF。
CAS号：
性质：电子在固体(金属、半导体或绝缘体)或电解质溶液中的化学势。符号为EF。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条