1) graded junction varactor
缓变结变容二极管
2) graded junction diode
缓变结二极管
5) varactor diode
变容二极管
1.
Using the periodical surface′s character of band gap and impedance transition of electromagnetic crystal structure such as photonic band gap(PBG),frequency selection surface(FSS),high impedance surface(HIS) and so on,the varactor diode was put onto the approximate HIS′s surface to join each cell of metal on top layer to realize the electronic control for periodical structure.
利用如光带隙电磁结晶结构、高阻抗结构等周期性结构的带隙特性和阻抗特性,通过在类似高阻抗表面的周期性金属单元表面铺设有源器件———变容二极管,控制周期性结构的性能,建立有源周期性结构,影响入射电磁波的传播特性,实现对反射波束的指向的有源控制和有效改变。
2.
In this method, the capacitance of the varactor diode is changed by voltage.
文章详细介绍了一种225MHz-400MHz压控调谐滤波器的实现方法,该方法主要是通过电压改变变容二极管的电容,从而改变带通滤波器的中心频率,从而实现压控滤波。
3.
In this paper,the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.
本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。
6) Variable Capacitance Diode
变容二极管
1.
The Pre-condition for Variable Capacitance Diode Frequency Modulator Obtaining the Linear Frequency Modulation;
变容二极管调频器获得线性调频的条件
2.
It is confirmed by electrical measurements of I-V,C-V,C-f,and deep level transient spectrum that this is a variable capacitance diode of linear slowly varied heterojunction.
采用等离子体增强化学气相沉积技术和电子束蒸发技术制备了一种新型的线性缓变异质结变容二极管———Au/Cr合金(电极)/multi-layer(p)nc-Si∶H/(n)c-Si/(电极)Au/Ge合金结构。
补充资料：超突
1.跳跃奔突。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条