1) dark discharge
暗放电
2) Selfsustaining dark discharge
自持暗放电
3) film cartridge
放软片暗盒
4) Dark conductivity
暗电导率
1.
For obtaining high dark conductivity of p-type μc-Si∶H thin films with high crystalline volume fraction,the major processing parameters of the substrate temperature,hydrogen dilution ratio and boron doping ratio are primarily optimized by the method of orthogonal test.
Raman光谱和电导率测试结果表明:(1)在实验选取的参数范围内,衬底温度是影响薄膜暗电导率和晶化率的最主要因素,其次是氢稀释比,硼烷掺杂比的影响相对较小;(2)通过正交优化,获得了暗电导率为2。
2.
The microstructure ,morphology and electric property of thin films were investigated by XRD, SEM and dark conductivity measurements.
退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表面形貌,用电导率设备测试其暗电导率。
3.
The films are characterized and analyzed by Raman spectra,the effect of crystallization ratio on dark conductivity is investigated.
用Raman散射谱进行结构表征和分析,研究了薄膜晶化率对暗电导率的影响。
5) Dark current
暗电流
1.
Study of the dark current in very long wavelength quantum well infrared photodetectors;
甚长波量子阱红外探测器的暗电流特性研究
2.
Dark current characteristics of AIGaAs/GaAs quantum well infrared photodetector;
AlGaAs/GaAs多量子阱红外探测器暗电流特性
3.
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector;
一种减小GaN基肖特基结构紫外探测器暗电流的方法
6) dark conductivity
暗电导
1.
The microstructure and electric property of thin films were investigated by XRD and dark conductivity measurements.
利用X射线衍射仪(XRD)分析退火后的薄膜晶体结构,用电导率测试仪测试其暗电导率。
2.
Meanwhile the dark conductivity of intrinsic and doped films were also measured.
采用喇曼散射谱、扫描电子显微镜(SEM)和X-射线衍射(XRD)对掺磷硅薄膜的微结构进行了分析,并对掺杂前后薄膜的暗电导进行了测试,结果表明:掺磷后导致薄膜的非晶化。
补充资料：非自持放电
见自持放电。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条