1) longitudinal circuit
纵向电路
2) longitudinal circuit port
纵向电路端口
3) vertical electric field
纵向电场
1.
The vertical electric field of the buried layer is enhanced due to the low k(permittivity) of the dielectric buried layer at the drain side,the electric field in the drift region is modulated by the compound dielectric layer with different k .
CDL SOI结构利用漏端低k(介电常数)介质增强埋层纵向电场,具有不同k值的复合介质埋层调制漂移区电场,二者均使耐压提高。
2.
The vertical electric field of the buried layer and the vertical breakdown voltage are enhanced due to the low dielectric constant.
基于电位移连续性原理,利用低k提高埋层纵向电场和器件纵向耐压,并在此基础上提出SOI的介质场增强原理。
3.
The charges make the vertical electric field of the buried oxide in-crease fromabout 3ESi ,Cto the critical breakdown electric field of Si O2.
该结构在槽内产生随漏极电压变化的界面电荷,此电荷使埋氧层纵向电场从传统的3ESi,C升高到接近Si O2的临界击穿电场ESi O2,C;另外,硅窗口将耗尽层引入衬底,因而提高了器件的击穿电压。
4) longitudinal discharge
纵向放电
1.
Non-selfsustained longitudinal discharge CO_2 laser with pulsed preionization;
脉冲预电离非自持纵向放电CO_2激光器
5) vertical resistor
纵向电阻
1.
The effect of lateral and vertical resistors on device performances is discussed.
讨论了电阻层的横向电阻和纵向电阻对器件性能的影响。
补充资料：L2工业纯铝360℃热轧板表层纵向组织
L2工业纯铝360℃热轧板表层纵向组织
L2工业纯铝360。0热轧板表层纵向组织
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条