1) carrier drift transistor
载流子漂移型晶体管
2) current-carrying
载流
1.
The numerical method for nonlinear deformation problems of current-carrying columnar shell under the coupled action of electromagnetic field and mechanical field are studied.
针对在电磁场和机械场耦合作用下的载流柱壳的非线性变形问题的数值解法进行了研究。
2.
The nonlinear magnetoelastic kinetic equations,the electrodynamics equations and the expressions of Lorentz force of thin current-carrying plate under the action of the coupled field are given.
该文在给出载流薄板在耦合场作用下的磁弹性非线性运动方程、电动力学方程和洛仑兹力表达式的基础上,通过变量代换将描述载流薄板的磁弹性状态方程整理成含有10个基本未知函数的标准柯西(Cauchy)型。
3.
5/CuH68 under current-carrying situation shows that electric current has a notableinfluence to the tribology couple.
对铬青铜/黄铜在载流条件下的滑动摩擦磨损性能研究试验表明,电流对铬青铜/黄铜摩擦副的摩擦磨损行为具有显著影响,在同样速度下,有载流时的磨损率要高于无电流条件的磨损率,而有载流的摩擦系数低于无电流条件下的摩擦系数。
3) carrying current
载流
1.
5/T2 Cu under carrying current conditions were investigated.
采用自制的销盘摩擦磨损试验机,在载流条件下对铬青铜QCr0。
4) on-stream
载流
1.
Intermittent measurement technique of on-stream X-ray fluorescence analyser;
载流X荧光分析仪的采样测量技术
5) carrier
载流子
1.
New method of calculating the probability function of carriers occupying the impurity level;
一种计算载流子占据杂质能级的概率的新方法
2.
XPS, NIR, UV and Raman spectra indicated that there was conjugative effect between MWNT and bromine which induced the movement of π electrons from MWNT to bromine to increase the hole carrier density.
X光电子能谱、近红外光谱、紫外光谱、拉曼光谱表明多壁碳纳米管与溴之间存在共轭作用,这种作用导致多壁碳纳米管上的π电子向溴偏移,产生空穴载流子。
3.
On the basis of these, electroluminescent mechanism has been discussed and at the same time some problems such as low quantum efficiency and poor stability have been clarified that carrier balance injection is must, in the ele.
着重讨论了5种具有实用潜力Si基LED包括离子掺杂、Si-nc嵌SiO2、多孔硅、a-Si(C):H以及MOS结构,并对其电致发光机理以及存在的问题如量子效率低、稳定性差进行了分析,认为电致发光原子SiOx(X≤2)中发光中心和界面缺陷处载流子的辐射复合。
6) wear with current
载流磨损
参考词条
补充资料：晶体管-晶体管逻辑电路
| 晶体管-晶体管逻辑电路 transistor-transistor logic 集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。 |
说明：补充资料仅用于学习参考，请勿用于其它任何用途。