1) recessed channel
隐埋槽
2) buried-channel
隐埋沟道
1.
The I-V characteristics for SiC buried-channel MOSFETs based on an average mobility model is presented.
提出了一种SiC隐埋沟道MOSFET平均迁移率模型,并在此基础上对器件I-V特性进行了研究。
2.
The effects of several factors on mobility in 4H-SiC buried-channel (BC) MOSFETs are studied.
研究了几种因素对4H-SiC隐埋沟道MOSFET沟道迁移率的影响。
3) base insert
隐埋基极
4) buried layer
隐埋层
5) buried region
隐埋区
6) buried laying
隐埋敷设
补充资料：隐名埋姓
1.同"隐姓埋名"。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条