1) bipolar static induction
双极静电感应
2) B-SIT
双极性静电感应晶体管
3) BSIT
双极型静电感应晶体管
1.
The Physical Research on the Dynamic Performance of BSIT;
双极型静电感应晶体管动态性能的物理研究
2.
Great attention has been paid to the Bipolar static Induction Transistor(BSIT) for its advantages, such as high current gain, low voltage arop and high turn on and turn off spead, etc.
双极型静电感应晶体管（ＢＳＩＴ）以其高电流增益，低饱和压降以及高的开关速度等优异性能受到人们的广泛关注。
4) power Transistor/MBSIT
电力晶体管/MOS控制双极型静电感应晶体管
5) organic static induction transistor
有机静电感应三极管
1.
According to the actual organic static induction transistor (OSIT) its physical model is established.
根据实际制作的有机静电感应三极管(OSIT)建立有机静电感应三极管的物理模型,选取合适的结构参数,采用有限元法计算OSIT内部的电位数值解,依据OSIT导电沟道内的电位分布,分析栅极长度变化对OSIT工作特性的影响。
2.
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
6) electrostatic induction
静电感应
1.
This paper adopts the charge simulation method to calculate the level of electrostatic induction in a complete facitities and tight structure of a certain 500 kV ultra-high voltage substation on overall placement.
用模拟电荷法对一个全设备、紧凑结构500 kv超高压电站的静电感应水平进行了全方位计算,计算结果与定性分析基本相符。
2.
The relation between work and energy in the electrostatic induction are discussedand the 1/2 - factor in the formula of electrostatic interaction energy when the inductiveinteraction exists are studied.
论述了静电感应中的功能关系，详细分析了有感应作用存在时，静电互能公式中因子1／2的由来。
3.
Using three equivalent principle of spherical live object in its state of electrostatic balance,this paper calculates the electric potential of spherical live object space,with which student get a deeper understanding of the physical potential of electrostatic induction phenomenon.
利用球形带电体在静电平衡状态下的 3个等效原则 ,求解球形带电体空间的电位 ,加深学生对静电感应现象的物理实质的理解 。
补充资料：变电所静电感应
变电所静电感应
electrostatic induction of substation
b一ond一ansuoJ一ngdlon gonylng变电所静电感应(eleetrostatiesubstation)见恰电线路静电感应induetion of
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条