1) defective item,defective unit
缺陷实体
2) real defect
真实缺陷
1.
However,real defects exhibit a great variety of shapes.
然而,真实缺陷的形状多种多样。
2.
However,the shape of 70% real defects approximates elliptical shapes.
比较了新模型与真实缺陷及其圆模型引起的成品率损失,表明新模型在成品率估计方面更加精确。
3.
However,real defects exhibit a great variety of shapes.
本文提出了矩形缺陷轮廓的成品率模型,该模型与圆模型相比,考虑了缺陷的二维分布特性,接近真实缺陷形状及IC版图布线和成品率估计的特点。
3) Substantive flaw
实质缺陷
4) self-examination defects
实缺陷
1.
The scheme and implementation of self-examination defects on medical quality management
实缺陷医疗质量管理的构想与实施
5) crystal defect
晶体缺陷
1.
Studies of characteristics of crystal defects in diamond synthesized under different conditions;
不同生长条件下合成的金刚石晶体缺陷的特征研究
2.
Researching crystal defects with atomic force microscope;
利用原子力显微镜研究晶体缺陷
3.
The main type of crystal defects in this sample are dislocations, and some of them belong to the Frank type.
利用同步辐射X射线对人造金刚石晶体缺陷进行了形貌学研究,实验采用了透射 (劳埃 )形貌术和反射形貌术两种方法。
6) crystal defects
晶体缺陷
1.
Experimental method for reseaching crystal defects with synchrotron radiation topography;
利用同步辐射形貌术研究晶体缺陷的实验方法探讨
2.
The mechanism of the formation of mullite solid solutions was discussed from the viewpoint of crystal defects, and the detailed defects formula and reaction equations were given.
从晶体缺陷的角度探讨了莫来石Al4+2xSi2-2xO10-x的形成机理,并给出了缺陷表达式及缺陷反应方程式。
3.
Based on the new ternary infrared detection materials, Hg1-xZnxTe and Hg1-xMnxTe, and the substrates for Ⅱ -Ⅵ compound film epitaxy, CdTe and Cd1-xZnxTe, the researches on the appliction, crystal growth techniques and the crystal defects of Ⅱ -Ⅵ compounds are reviewed.
以新型红外探测材料Hg_(1-x)Zn_xTe、Hg_(1-x)Mn_xTe及外延衬底材料CdTe及Cd_(1-x)Zn_xTe为代表分析了Ⅱ-Ⅵ族化合物光电子材料的应用背景与现状、晶体生长方法,晶体生长过程中的主要理论问题及各种晶体缺陷的形成与控制。
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条