1) moment
片刻
2) silicon etching
硅片刻蚀
1.
The experimental result indicates that the silicon etching velocity gradually increases as the volume of ammonia increases from 0 to a certain volume,and then from that points the silicon etching velocity decreases as the ammonia volume increases.
H2O在HF/HNO3/H2O体系中对硅片刻蚀速度的影响。
补充资料：片刻
很短的时间；一会儿：休息片刻｜暂停片刻｜这雪下得真大，片刻的工夫地面上就全白了。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。