1) hole capture
空穴俘获<冶>
2) captured hole
俘获空穴
3) hole capture
空穴俘获
4) oxide hole-traps
氧化层空穴俘获
1.
Based on the two-step interface trap buildup model and the statistical thermodynamics mechanism of point defects in solids, a relation between the radiation induced increase of oxide hole-traps and the buildup of interface traps in MOSFET is proposed.
基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式。
5) hole capture
空穴俘虏
6) hole trapping
空穴捕获
补充资料：融融冶冶
1.美好艳冶。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条