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1)  transistor seconds
晶体管次品
2)  triple diffused transistor
三次扩散晶体管
3)  Primary Crystal
一次晶体
1.
Hot Ductility and Dynamic Recrystallization of Steels 40Cr and 20Mn2 Primary Crystals;
40Cr和20Mn2钢一次晶体的高温塑性及动态再结晶
4)  secondary crystal
次生晶体
5)  crystal quality
晶体品质
1.
The relationship between toughness index of synthetic diamond and crystal quality was studied by measuring with toughness index apparatus and diashape system.
采用冲击韧性仪和Diashape系统对不同品级的金刚石样品进行冲击韧性和晶体品质测定,探讨金刚石冲击韧性与品质参数之间的相关性。
2.
The crystal quality and properties of spherical HMX such as particle size distribution,morphology,particle defects,chemical purity,thermal properties and sensitivities were characterized by laser light scattering,optical microscopic,optical microscopic with matching refractive index,density gradient technique,differential scanning calorimetry(DSC)and sensitivity tests.
分别采用激光粒度仪、光学显微镜、高效液相色谱、X-射线衍射等方法对球形化处理前后的奥克托今(HMX)颗粒的形貌、化学纯度、晶体缺陷等晶体品质进行了表征,采用TG-DSC和5s爆发点实验研究了其热性能,测试了其撞击感度、摩擦感度和静电感度。
3.
The relationship between toughness index of synthetic diamond and crystal quality was studied by measuring with toughness index apparatus and diashape system.
采用冲击韧性仪和 Diashape 系统对不同品级的金刚石样品进行冲击韧性和晶体品质测定,探讨金刚石冲击韧性与品质参数之间的相关性。
6)  crystal product
晶体产品
1.
The harm,cause and effect factors of crystal products'caking were analysed and several different methods to prevent crystal products from caking were put forward,which is of a certain directive significance to develop new high efficacy anti-caking agents for crystal products.
分析了晶体产品发生结块的危害、原因及影响因素,提出了防止晶体产品结块的数种措施,对于研制新型高效的晶体产品的防结块剂具有一定的指导意
补充资料:晶体管-晶体管逻辑电路
晶体管-晶体管逻辑电路
transistor-transistor logic
    集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路(DTL)中的二极管,改为使用多发射极晶体管而构成。TTL电路于1962年研制成功,基本门电路的结构和元件参数,经历了3次大的改进。同DTL电路相比,TTL电路速度显著提高,功耗大为降低。仅第一代TTL电路产品,就使开关速度比DTL电路提高5~10倍。采用肖特基二极管的第三代TTL电路,开关时间可缩短到3~5纳秒。绝大部分双极型集成电路,都是TTL电路产品。
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