1) valley current
谷电流
2) valley point current
谷点电流
4) PVCR
电流峰谷比
1.
The measurement results of the fabricated devices show that the maximum peak valley current ratio(PVCR)is 17.
测量结果表明:最大电流峰谷比为17。
5) peak-to-valley current ratio
峰谷电流比
1.
9As layer between GaAs layers,potential wells beside the two sides of barrier are deepened,resulting in an increase of the peak-to-valley current ratio (PVCR) and a peak current density.
9As层用以降低势垒两边的势阱深度,从而提高了器件的峰谷电流比和峰电流密度。
6) peak-to-valley current ratio
峰-谷电流比
1.
The peak-to-valley current ratio was 7.
06×105A/cm2,峰-谷电流比为7。
2.
The highest peak-to-valley current ratio is 18.
在半绝缘的InP衬底上采用分子束外延的方法生长制备了不同势垒厚度的RTD材料样品,室温下测量的最高峰-谷电流比为18。
补充资料：标准冲击电流波形(见冲击电流发生器)
标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form
blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条