1) divanadyl
[,daivə'nædil]
二氧二钒根
2) vanadium dioxide
二氧化钒
1.
Preparation techniques of vanadium dioxide nanopowders and thin films;
二氧化钒纳米粉体和薄膜的制备技术
2.
Fabrication of vanadium dioxide films at low temperature and researches on properties of the films;
二氧化钒薄膜的低温制备及其性能研究
3.
Vanadium dioxide thin films depositing on ZnSe substrate and the component changed after annealing;
ZnSe基片上制备二氧化钒薄膜及退火改变组分研究
3) VO_2
二氧化钒
1.
Preparing VO_2 Powder using Leach Solution of Vanadium Slag;
采用钒渣浸出液制备二氧化钒粉末
2.
Influence of Annealing Temperature on Infrared Transmittance of VO_2 Film
退火温度对二氧化钒薄膜红外透过率的影响
3.
A complementary metal oxide semiconductor(CMOS) readout integrated circuit(ROIC) for the sensitive material of vanadium dioxide(VO_2) was introduced.
介绍了一种针对二氧化钒敏感材料的CMOS读出电路(RO IC)。
4) VO2
二氧化钒
1.
The effects of the nature, phase transition principle and several making technologies of the VO2 film on the film phase transition properies are presented mainly and its application directions given.
本文着重介绍二氧化钒（ＶＯ２）薄膜的性质、相变原理、若干制备工艺对ＶＯ２薄膜相交特性的影响并给出ＶＯ２薄膜的应用方向。
2.
VO2 is a special function material, which undergoes a semiconductor-metal phase transition approximately at 68 degrees Celsius which is near room-temperature.
二氧化钒是一种具有特殊相变性能的功能材料。
5) VO 2
二氧化钒
1.
The Study of Optimizing Parameters in Preparing VO 2 Films by Magnetron Sputtered Method;
磁控溅射法制备二氧化钒薄膜最佳参量的研究
2.
for the convenience of subsequent process,V 2 O 5 should convert into VO 2 as soon as possible.
在钒氧化物的转化过程中,应尽可能使其转化为二氧化钒。
6) vanadium dioxychloride
二氧氯钒
补充资料：二(1-苯基-1,3-丁二酮)氧代钒(Ⅳ)
CAS: 14767-37-4
分子式: C20H18O5V
分子质量: 389.30
熔点: 218℃
中文名称: 二(1-苯基-1,3-丁二酮)氧代钒(Ⅳ)
英文名称: oxobis(1-phenyl-1,3-butanedionato-O,O')-Vanadium；oxobis(1-phenyl-1,3-butanedionato-o,o')-vanadiu；vanadium oxobis(1-phenyl-1,3-butanedionate)
分子式: C20H18O5V
分子质量: 389.30
熔点: 218℃
中文名称: 二(1-苯基-1,3-丁二酮)氧代钒(Ⅳ)
英文名称: oxobis(1-phenyl-1,3-butanedionato-O,O')-Vanadium；oxobis(1-phenyl-1,3-butanedionato-o,o')-vanadiu；vanadium oxobis(1-phenyl-1,3-butanedionate)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条