1) electron sink
电子冷阱
2) electron trap
电子陷阱
1.
The electron trap effect of the sulfur+gold sensitization center on the photoelectron behaviors;
S+Au增感中心的电子陷阱效应对光电子行为的影响
2.
It is found that the trap effect of the sensitization centers varies from the hole trap to deep electron trap with the change of sensitization conditions.
实验发现,随增感条件的不同,增感中心发生了由空穴陷阱作用向深电子陷阱作用的转变。
3.
The influence of electron traps in silver bromide microcrystal, on .
通过测量溴化银光作用过程的时间分辨谱,讨论了卤化银晶体中电子陷阱对光电子运动行为的影响,分析了电子陷阱效应同增感时间之间的关系以及两个一级衰减区间寿命值同增感时间的关系。
3) electron traps
电子陷阱
1.
Electron paramagnetic resonance(EPR) was also used to investigate electron traps in the phosphor.
用喇曼和顺磁共振 (EPR)等手段表征了掺Si4+ 后BaFBr∶Eu2 + 中电子陷阱的结构 ,并根据此结构解释了其激发波长的红移量比其它低价阳离子掺杂都高的原因。
4) electron trap
电子阱<冶>
5) beam trap
电子束阱
6) shallow electron traps
浅电子陷阱
1.
By comparing the electron signal with that of pure specimen,it is found that the free photoelectrons decay time is delayed 338ns by the introduced shallow electron traps.
对比未掺杂样品发现,掺杂引入的浅电子陷阱使样品中的自由光电子衰减时间延长了338ns,衰减过程中出现一个明显的一级指数快衰减区;较高浓度掺杂情况下,测量了光作用产物对光电子衰减的影响,分析表明,光作用产物是具有深电子陷阱作用的银簇。
2.
The effect of Ruthenium dopant on photographic sensitivity by varying the dopant amount and location in model sliver bromide cubic emulsions has been studied It is concluded that doping Ruthenium, which functions as shallow electron traps inside sliver bromide crystal, is beneficial for increasing sensitivit
研究了浅电子陷阱掺杂剂———钌盐Ru (Ⅱ )加入纯溴立方体乳剂中 ,对感光度的影响 ,结果表明在乳剂颗粒的一定位置 ,掺杂一定量钌盐能明显提高乳剂感光度。
3.
To describe the photoelectron rise and decay process of AgCl microcrystals doped with [Fe(CN) 6] 4-, a kinetics model composed of three intrinsic centres and a shallow electron traps(SETs)is set up, and further more, a set of differential equations is deduced.
为了描述在晶体生长阶段掺入 [Fe(CN) 6 ]4 - 的立方体AgCl微晶中光电子的产生与衰减过程 ,建立了一种由三个固有中心和一个浅电子陷阱 (SETs)组成的动力学模型 ,并引出一组微分方程 。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条