2) semiconductor ceramic capacitors
半导体陶瓷电容器
1.
ELECTRONIC COMPONENTS & MATERIALS (China), Vol 18, No 6, P 31 33(Dec 1999) In Chinese Introduced are semiconductor ceramic capacitors including general technology, ceramic structure, dielectric property and the differences between them and the capacitors of BaTiO 3.
论述半导体陶瓷电容器的一般工艺、瓷体结构、介电特性及其与一般ＢａＴｉＯ３ 型陶瓷电容器之差异。
4) semiconductor electrode capacitance
半导体电极电容
5) surface layer semiconductor ceramics capacitors
表面层型半导体陶瓷电容器
1.
Presented are surface layer semiconductor ceramics capacitors, including its bas ic structure, important techniques, design parameters, specifications and typic characteristics, and equipment.
对表面层型半导体陶瓷电容器的基本结构原理、关键生产技术、关键设计参数、关键生产设备以及电容器规格和典型特性作了简要介绍。
6) grain boundary layer semiconductor ceramic capacitor
晶界层半导体陶瓷电容器
1.
The grain boundary layer semiconductor ceramic capacitors were manufactured by one-time sintering technology.
采用一次性烧成技术研制了晶界层半导体陶瓷电容器,在瓷料配制过程中先后加入施主杂质和含有受主杂质的晶界助烧剂,两者在还原烧成时促使晶粒生长并半导化,助烧剂在氧化时有利于晶界绝缘层形成。
补充资料：气敏半导体(见传感器半导体材料)
气敏半导体(见传感器半导体材料)
gas sensory sernieonduetor
气敏半导体gas sensory Semieonductor见传感器半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条