1) minority carrier
少子
2) Oligospermia
少精子症
1.
The Clinical Investigation of Kangbao Oral Fluid Treating Male Infertility with Oligospermia;
康宝口服液治疗少精子症的临床观察
2.
Objective To evaluate the frequency of microdeletions in the long arm of Y chromosome of idiopathic infertile males with azoospermia and oligospermia in Xinjiang province in China and to investigate the difference of Y microdeletion frequencies between two nations.
目的评估新疆地区汉族、维吾尔族不明原因无精子症和严重少精子症男性患者Y染色体长臂微缺失的频率,探讨不同民族间Y染色体长臂微缺失发生率的差异。
3.
Objective:To investigate the effects of Shengjingbao on spermatogenesis in the mouse model of oligospermia and its action mechanisms.
目的:研究"生精宝"对小鼠少精子症模型生精功能的作用并探讨其机制。
3) oligospermatism
少精子症
1.
It has two types: Oligospermatism and astheno-spermia.
精液异常是男性不育症的最主要病因，少精子症、弱精子症是精液异常的主要类型。
5) Minority carrier lifetime
少子寿命
1.
The minority carrier lifetime(τ) scan mapping along the multicrystalline ingot was obtained by means of Microwave Photo Conductive Decay (μ-PCD).
应用微波光电导衰减仪(μ-PCD)测得了铸造多晶硅硅锭沿生长方向少子寿命的分布图。
2.
All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
3.
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法 (PCD)研究了热氧化钝化对直拉硅少子寿命的影响 。
6) carrier lifetime
少子寿命
1.
Oxygen and carbon behavior and minority-carrier lifetimes in multicrystalline silicon(mc-Si) were investigated by means of FTIR and QSSPCD after three step annealing.
对多晶硅片进行三步退火处理,用傅里叶红外光谱仪(FTIR)和准稳态光电导衰减法(QSSPCD)测硅片退火前后氧碳含量及少子寿命,并对单晶硅片做同样处理进行比较。
2.
Through the investigation for variations of minor carrier lifetime before and after light irradiation and annealing and the correlation between light degradation and boron and oxygen concentrations, it was clarified that boron and interstitial oxygen were major components of defect center for light degradation of Bdoped cSi solar cells.
通过光照及退火处理前后少子寿命变化的研究以及光衰减与硼和氧浓度关系的研究,表明引起掺硼晶硅太阳电池光照衰减的主要因素是硼和间隙氧的存在。
补充资料：少子
分子式：
CAS号：
性质：在掺杂半导体，即非本征半导体中，对电导贡献很小的载汉子，简称少子，如n型半导体的空穴，p型半导体的电子。
CAS号：
性质：在掺杂半导体，即非本征半导体中，对电导贡献很小的载汉子，简称少子，如n型半导体的空穴，p型半导体的电子。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条