1) static leakage current
静态漏电流
2) quiescent current
静态电流
1.
Fault localization algorithm combining quiescent current and transient current;
一种将静态电流与动态电流相结合的集成电路故障定位算法
2.
The quiescent current of the amplifier is only 0.
设计了一种静态电流约为0。
3.
A low quiescent current LDO is presented in this thesis,which is designed and simulated based on SMIC 0.
18um Logic CMOS工艺设计和仿真的低静态电流低压差线性稳压器(LDO)电路结构。
3) IDDQ
静态电流
1.
Recently, a novel fault diagnosis technology including IDDQ and IDDT has developed rapidly.
基于电流的故障诊断方法包括静态电流诊断方法(IDDQ)和动态电流诊断方法(IDDT),是近期发展起来的新方法。
2.
Based on the technology of IDDQ and IDDT, this paper studies the method of fault diagnosis in circuit by applying theory of wavelet analysis and classification in pattern recognition.
本文以集成电路的故障检测和定位为主线,在采用静态电流检测(IDDQ)和动态电流检测(IDDT)技术的基础上,结合模式识别中的小波分析及分类决策理论,对电路的故障诊断进行了较为系统的研究。
4) low quiescent current
低静态电流
1.
Low dropout and low quiescent current are important for long battery life in LDO linear regulators.
L DO线性稳压器的低漏失电压、低静态电流特性使电池使用具有高效率和长寿命。
5) off-state leakage current
关态泄漏电流
1.
Simulation of the off-state gate current,drain current and substrate current in nano-scale MOSFET indicated that the edge direct tunneling current(IEDT) was far larger than conventional gate induced drain leakage current(IGIDL),subthreshold leakage current(ISUB),and band-to-band tunneling current(IBTBT),thus becoming the dominating off-state leakage current.
对50 nm和90 nm MOSFET器件的Id-Vg特性进行了比较,发现在高Vdd下,关态泄漏电流(Ioff)随IEDT的增加而不断增大,并且器件尺寸越小,Ioff越大。
2.
The off-state leakage current,transconductance,and the gate leakage current of the devices are monitored.
通过对这两种器件关态泄漏电流、跨导和栅电流等电学参数进行分析,得出当器件发展到深亚微米阶段时,影响其辐射效应的主要原因是场氧化层中的陷阱电荷。
6) IDON
通态漏源电流
补充资料：反向漏电流（inverseleakagecurrent）
反向漏电流（inverseleakagecurrent）
流过处于反向工作的pn结的微小电流称为反向漏电流。理想pn结反向漏电流中还包括体内扩散电流与空间电荷区产生电流两部分，硅pn结空间电荷区产生电流起支配作用。反向漏电流的大小与组成pn结的半导体材料禁带宽度呈指数关系，反向漏电流中还包括表面漏电流，表面漏电流的大小与pn结制作工艺密切相关。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条