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1)  loaded Q factor
有载品质因数
2)  Unloaded quality factor
固有品质因数
3)  quality factor
品质因数
1.
A method to calculate the average quality factor value ■ of strata;
一种计算地层平均品质因数值的方法
2.
Amplifying of the quality factor of AFM microcantilevers in liquid environment;
提高液体中AFM微悬臂梁品质因数的研究
3.
Definition of the quality factors Q of parallel and serial resonant circuits according to the exchange of energy;
从能量转换的角度谈谐振及其品质因数Q值的统一确定
4)  Q factor
品质因数
1.
Based on the definition of Q factor,when the loss of inductor should be considered,the tie between the unloaded quality factor QP of LC resonant circuit and the intrinsic quality factor Q0 of inductor coil is:QP=Q20-1(1+1/Q0),QP=Q0,while Q01.
根据品质因数的定义,得出了线圈内阻不能忽略时,LC回路的空载品质因数QP与线圈固有品质因数Q0的关系:QP=Q20-1(1+1/Q0),当Q0 1时,有QP=Q0。
2.
By way of a study on the near-surface seismic wave dual transmission mechanics,the paper discussed the relation between the Q factor and shothole depth,then according to the maximum seismic shot wave energy,maximum signal-to-noise ratio and shothole depth correlation curves of different area,different Q factor,worked out corresponding shot depth.
通过对地震波在近地表附近双源传递机理的研究,论述了品质因数与激发井深的关系,并根据不同地区、不同品质因数,其地震波最大激发能量、最大信噪比与激发井深的关系曲线,给出了相应的激发深度。
3.
The microring resonator was fabricated by using CMOS compatible processes with 1 μm wide waveguides and 400 μm in radius,which has a high Q factor up to 20,000 and a Free spectrum range of 0.
经测量,其品质因数(Q值)高达20 000,自由光谱范围(FSR)为0。
5)  Q-factor
品质因数
1.
Measurement of permeability and Q-factor of ferrite toroids;
铁氧体环的导磁率及其品质因数的测量
2.
Obtained results show that a proper amount of mixed Bi2O3-Nb2O5 addition could promote effectively not only densification,decrease in grain size,and improve uniformity of crystalline grains,but also Q-factor of specimen.
结果表明:适量的Bi2O3-Nb2O5复合掺杂,既有利于细化晶粒、促进晶粒均匀致密,又提高了品质因数Q,其磁性能明显优于单独掺杂。
3.
The quality factor (Q-factor) of the resonators is calculated and the affection of the photonic crystal s structure and the defect s geometrical parameters on the resonance characters are analyzed.
采用数值计算方法,模拟了具有二维光子带隙结构的太赫兹频段谐振腔的谐振模式场分布,计算了这种谐振腔的品质因数,详细分析了光子晶体结构、缺陷腔几何参量对谐振特性的影响·计算得到频率落在光子晶体禁带内的单一、高阶谐振模式,且缺陷腔横向尺寸越大,谐振模式的阶数越高·这种谐振腔具有很高的品质因数,腔体的纵向长度对品质因数的影响较大
6)  figure of merit
品质因数
1.
The design thought of rising figure of merit for low voltage UDMOSFET is put forward,and on basis of which certain effect having on the device structure is analysed,for example,the balance between special resistant and break down voltage;the design consideration of parasitic capacitance;even getting optimum area.
对低压UDMOSFET的结构设计提出了要以提高品质因数为指向的思想,分析了对其产生影响的一些相关因素,如特征电阻和击穿电压之间的平衡,寄生电容的设计考虑,以及在满足上述条件下的面积优化。
补充资料:电学品质因数
分子式:
CAS号:

性质:任何电介质,包括压电陶瓷在内,当它处在电场中,尤其是交变电场中长期工作,都或多或少地有发热现象产生。这说明介质内部发生了某种能量的耗散,这就是介质损耗。换言之,介质损耗越少,材料的电学品质因数(Qe)就越高。因此电学品质因数和介质损耗角正切值一样是表征介质品质的一个重要指标,且两者互成倒数。

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