1) optoelectronic model
光电模型
2) arc illumination model
电弧光照模型
3) photoionization model
光致电离模型
1.
The photoionization model presented by Bajtlik, Duncan, & Ostriker(BDO) was used to perform an estimate of the mean intensity of the ultraviolet background radiation at the lyman limit.
采用Bajtlik ,Duncan和Ostriker(BDO)提出的光致电离模型 ,我们估算了赖曼系限处紫外背景辐射的平均强度J(ν0 ) 。
4) optoelectronic device model
光电器件模型
5) enhanced photocurrent models
增强光电流模型
1.
Transient radiation response for microcircuit pn junctions with enhanced photocurrent models are calculated using two-dimensional numerical simulation.
用增强光电流模型对微电路 pn结瞬态电离辐射响应开展了数值模拟计算。
6) Wirth-Rogers photocurrent models
Wirth-Rogers光电流模型
1.
On the basis of Wirth-Rogers photocurrent models, the enhanced models include two additional effects as high injection effects on excess minority carrier lifetime and electric fields in the substrate (quasi-neutral regions).
该模型在Wirth-Rogers光电流模型的基础上 ,增加考虑了高注入对过剩载流子寿命的影响以及衬底 (准中性区 )电场的效应 ,这些效应对于高阻材料是不容忽视的。
补充资料：光电对抗侦察(见光电对抗)
光电对抗侦察(见光电对抗)
electro-optical reconnaissance of electronic warfare
guangdian duikang zheneha光电对抗侦察(elee‘ro一op‘ical reconnais-sanee ofeleetronicwarfare)见光电对抗。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条