说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。
您的位置:首页 -> 词典 -> Si-C-N薄膜
1)  Si-C-N Coatings
Si-C-N薄膜
2)  Cr-Si-C-N film
Cr-Si-C-N薄膜
1.
In this paper,Cr-Si-C -N films were prepared by cathode arc ion deposition technique,in which tetramethylsilane(TMS) was used as Si and C sources,and their concentrations in the Cr-Si-C-N films can be controlled by TMS flow.
采用电弧离子反应沉积技术在SCM415渗碳淬火钢基片上沉积了Cr-Si-C-N薄膜,三甲基硅烷(TMS)反应气体作为Si和C掺杂源,通过改变TMS流量实现了薄膜中Si和C含量的调节。
3)  Si-C-H film
Si-C-H薄膜
1.
Si-C-H films,grown at 300 ℃ by rf plasma enhanced chemical vapor deposition (PECVD) with hydrogen-diluted silane and methane mixture, was annealed at 650 ℃ in nitrogen atmosphere.
本实验采用射频PECVD方法以高氢稀释的SiH4和CH4混合气体,在300℃低温下生长出了Si-C-H薄膜,并对沉积的薄膜在N2氛围中进行了退火研究。
4)  Ti-Si-N films
Ti-Si-N薄膜
1.
The influence of bombardment energy on the growth and mechanical property is investigated,and the influence of bombardment energy on the growth mechanism of Ti-Si-N films is discussed.
试验结果表明:当轰击能量为700eV时,Ti-Si-N薄膜晶粒直径达到了最小值11nm,此时Ti-Si-N薄膜的硬度相对最高,为33GPa。
5)  Nb-Si-N films
Nb-Si-N薄膜
1.
The experimental results indicate that through controlling the SiH_4 partial pressure in the mixed gas,it is convenient to deposit Nb-Si-N films different in silicon contents by m.
结果表明,采用反应磁控溅射技术通过控制混合气体中SiH4分压可以方便地获得不同Si含量的Nb-Si-N薄膜。
6)  Cr-Si-N coating
Cr-Si-N薄膜
1.
Cr-Si-N coatings by incorporating several atomic percentage of Si to CrN were prepared,using an arc ion plating method.
利用电弧离子镀方法,在(SCM415)钢基体上制备了Cr-Si-N薄膜。
补充资料:Al-Si cast aluminium alloy
分子式:
CAS号:

性质:以硅为主要合金元素的铸造铝合金。硅的添加量范围为5%~25%,并添加镁、铜等元素,形成亚共晶型、共晶型或过共晶型合金。含硅量为5%~13%的亚共晶型或共晶型合金是工业生产中应用最广泛的铸造铝合金。良好的铸造工艺性能和气密性是它们的主要特点。含硅量在13%以上的过共晶型合金具有热膨胀系数小、耐磨性好等特点。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条