1) Nb-doped
掺Nb
1.
Tin oxide films of Nb-doped were first deposited on glass tube by spray pyrolysis usin.
04时的SnO_2薄膜导电性能最好,电阻降低到28Ω;而掺Nb的。
2) Nitrogen-doped
掺N
1.
Nitrogen-doped nanosize TiO2 was prepared by sol-gel method with TBT and EDA as forerunner body,ethanol as solvent and glacial acetic acid as inhibitor.
以钛酸四丁酯(TBT)及乙二胺(EDA)为前驱体,乙醇为溶剂,冰醋酸为抑制剂,通过溶胶-凝胶法制备了纳米掺NTiO2,并对其结构及光谱性质进行了表征,根据差热-热重分析(TG-DTA)确定了所制备样品的晶型转换温度及最佳的煅烧温度;根据紫外-可见漫反射光谱(UV-Vis/DRS)表征了其光谱吸收特性;根据X射线衍射光谱(XRD)确定了其粒径及晶相结构;根据X射线光电子能谱(XPS)分析了其表面组成。
3) modification of N element addition
掺N改性
4) Nitrogen-doped nano-titanium dioxide
掺N纳米TiO_2
5) 300mm nitrogen-doped Czochralski silicon wafer
300mm掺N直拉Si片
1.
Flourier transformation infrared spectroscopy and scanning infrared microscopy are used to measure the amount of precipitated oxygen and the oxygen precipitate density in a 300mm nitrogen-doped Czochralski silicon wafer,respectively.
通过这样的方法,定性地研究了300mm掺N直拉Si片的原生氧沉淀的径向分布。
补充资料：掺掺
1.女手纤美貌。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。