2) power semiconductor devices
功率半导体器件
1.
All of various new power semiconductor devices use infegrati on technology from the microelectronics and have achieved power integration.
功率半导体器件主要用来控制能源和负载之间的能量流,使这种控制有很高的精度,特别快的控制时间和很小的耗散功率。
3) power semiconductors
功率半导体器件
1.
The over-heat of power semiconductors is the main reason causing the failure of power supply,so it is necessary to well process heat design to enhance the reliability of power supply.
功率半导体器件广泛应用于各种电源设备中。
4) power semiconductor device
功率半导体器件
1.
Begining with the operational surrounding of power semiconductor devices,MOSFET and IGBT,the paper gives detailed analysis of on-state volatge,current and switching time,and advances if switching at a suitable instantaneous current,the devices can realize ZCS and ZVS and non-voltage-overshot during switching period.
从功率半导体器件MOSFET和IGBT的工作环境出发,详细分析了器件的通态电压、电流及开关时刻,得出在合适的关断电流瞬时值下,不仅能实现功率器件的ZCS,还能实现ZVS和无电压过冲换流的结论。
5) power semiconductor
功率半导体器件
1.
The paper introduced the development status of power semiconductor and Intelligent/Smart Power Module,analyzed the SPM/IPM package structure,character,process flow and materials including the process problems and solutions,finally discussed the trend of package design.
文章介绍了功率半导体器件及智能功率模块的发展,分析了常用(一般低于1500V)智能功率模块的特点、结构和工艺流程,以及封装过程所使用的材料和产生的问题,最后探讨了封装设计的发展趋势。
6) power bipolar semiconductor devices
功率双极半导体器件
1.
The emergence of aluminium implant technology (“i2”) at Dynex Semiconductor for the manufacture of power bipolar semiconductor devices has been well documented.
Dynex半导体公司用于功率双极半导体器件制造的铝注入技术(“i2”)的问世得到文献的肯定。
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条