1) Cu metallization/Cu interconnects
Cu金属化/Cu互连
2) Cu metallization
Cu金属化
3) Cu interconnects
Cu互连
1.
Residual stress distribution in Cu interconnects was analyzed using three-dimension finite element model to study the structure effect of stress migration failure.
为研究铜互连系统中各因素对残余应力及应力迁移失效的影响,建立了三维有限元模型,用ANSYS软件分析计算了Cu互连系统中的残余应力分布情况,并对比分析了不同结构、位置及层间介质材料的互连系统中的残余应力及应力梯度。
4) Cu interconnects
Cu互连线
1.
Texture and grain boundary character distribution of Cu interconnects with different line width for as-deposited and annealed conditions were measured by EBSD.
采用EBSD研究了不同线宽和退火前后Cu互连线的织构和晶界特征分布。
2.
Microstructure of Cu interconnects and blanket films were analyzed by using TEM、SEM、XRD and EBSD.
通过TEM、SEM、XRD和EBSD,观察了Cu互连线和平坦Cu膜的微观结构。
5) Cu metallization
Cu互连
6) Cu interconnect
Cu互连
1.
The temperature characteristics of stress-induced voiding in Cu interconnects
Cu互连应力迁移温度特性研究
2.
Using 100nm ULSI devices as the main example, we discuss briefly some issues of the material physics involved, including Cu interconnects, metallization and low ε dielectric materials associated with interconnection.
文章以 10 0nmULSI器件为主 ,简要介绍与互连相关的一些材料物理问题 ,其中包括Cu互连、金属化及低介电常数介
补充资料：连最
1.旧指考评政绩﹑军功连续为上。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条