1) S/D series resistance
源漏串联电阻
1.
Because of the great potential of SiC MOSFETs and circuits, in this paper, the characteristics of 6H-SiC PMOSFETs are studied systematically, emphasizing on the effects of interface state and S/D series resistance on SiC PMOSFETsFirstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented.
研究了SiC的晶体结构，分析了SiC中杂质的不完全离化现象以及SiC中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了SiC PMOS空间电荷区的电特性； 本论文重点分析了界面态分布和源漏串联电阻对SiC PMOS器件特性的影响。
2) drain series resistance
漏串联电阻
3) series resistance
串联电阻
1.
The equivalent series resistance of silicon solar cell can influence its straight volt-ampere property and short-circuit current, but have no influence on open-circuit voltage.
硅太阳能电池等效串联电阻会影响其正向伏安特性和短路电流,而对开路电压没有影响,另外串联电阻的增大会使太阳能电池的填充因子和光电转换效率降低。
2.
Considering the influence of residual flux and applying controlled closing technology,transformer inrush current is reduced by combing controlled closing technology and series resistance,setting proper resistance and cut time.
该技术将选相位关合法和串联电阻法相结合,考虑了剩磁的影响,在应用选相位关合法的基础上,通过设置适当的电阻及其切除时间来进一步降低励磁涌流。
3.
By deducting the circuit equation of solar cells under illumination,simple mathematical expressions to calculate the series resistance and the shunt conductance of solar cells were presented.
通过对太阳电池在光照时等效电路的电路方程进行推导,得到了太阳电池在光照条件下串联电阻和分流电阻的数学表达式。
5) S/D resistance
源漏电阻
6) source-drain resistance
漏源电阻
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条