1) self-stopped etch
腐蚀自停止
1.
Heavy boron-diffusion and self-stopped etch technique is a universal means to control the thickness accurately in micromachining.
浓硼扩散腐蚀自停止工艺是微机械加工中用于精确控制厚度尺寸的常用工艺,被广泛应用于微陀螺、微加速度计等惯性器件的加了工艺中。
2) etch-stop
自停止腐蚀
1.
Research on deep boron diffusion etch-stop layer silicon wafer process;
高浓度硼深扩散自停止腐蚀层硅片工艺研究
2.
A novel process of fabricating sub-micro beams with contactless electrochemical etch-stop technique is presented.
根据金硅腐蚀自停止现象发生的条件,结合硅材料的各向异性腐蚀特性,设计器件结构,利用腐蚀暴露面积变化实现了硅的选择性自停止腐蚀。
3.
The p+ layer used in highly-doped boron etch-stop and pn junction used in electrochemical etch-stop is not thin enough to achieve thickness in sub-micro or nano dimension.
纳米结构加工的控制精度要求较高,浓硼自停止所需的浓硼扩散层和电化学自停止腐蚀所需的pn结由于浅结制作难度高,导致制作亚微米和纳米厚度结构比较困难,往往需要使用SOI硅片等昂贵的衬底材料。
3) pn junction self-stop etching
pn结自停止腐蚀
1.
It was fabricated using pn junction self-stop etching combined with adhesive bonding,and only three masks were used during the process.
传感器采用pn结自停止腐蚀和粘结剂键合的方式制造,制造过程仅需三块掩模板。
4) etching-stop
腐蚀停止
1.
A typical fractal phenomenon during fabricating handfree ultrthin silicon membrane by etching-stop is presented.
利用浓硼扩散腐蚀停止技术制备自由悬空硅薄膜时 ,在薄膜的表面观察到了呈分形生长的反应生成络合物聚集结构 。
5) etch stop layer
腐蚀停止层
6) self stop etching process
自截止腐蚀
1.
Thin silicon foils with thickness about 3 to 4 μm are prepared by semiconductor process combined with heavy doped self stop etching process.
以重掺杂自截止腐蚀工艺制备的厚度为 3～ 4μm的自支撑Si平面薄膜已在X光激光和惯性约束聚变分解实验中得到应用。
补充资料：自调自净自度
【自调自净自度】
（术语）同自调项。
（术语）同自调项。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条